JS28F640J3F75E

Memory is important to both computer systems and embedded systems. Without rapid access to large stores of information, both types of machines would be greatly limited in their processing capabilities. There are a variety of memory types that have been developed over the years to meet the demands of both types of machines. The purpose and structure of different memory systems can vary, but all are complex, as are the components that make them up. This article will discuss the JS28F640J3F75E memory and its application field and working principle.

Application Field

The JS28F640J3F75E is a product of the NOR Flash family. It has a 65nm process technology, organized into 16-bit words. There are 1024 blocks with 64K words each and eight bytes in each word. Furthermore, the memory density of this chip is 64Mbits, with a Vcc of 3.0V-3.6V.

It works as a non-volatile memory, which means it can store data even when there is no power supply. This is one of the reasons why the JS28F640J3F75E is so popular in embedded systems. It is particularly suitable for applications with high temperature performance requirements and relatively large storage requirements.

Apart from being used in embedded systems, this memory can also be used in applications such as Secure Digital (SD) cards, Smart Media cards, mobile phones, and other portable media cards. In general, the JS28F640J3F75E is suitable for a variety of applications.

Working Principle

The JS28F640J3F75E uses NOR Flash technology, which means it has an array of transistors connected in a way that when one is turned on, the others stay in their original state. This means that data can be stored and read in this memory constantly. Additionally, the array is divided into blocks, and each block contains 64K words, or 512Kbytes of data.

To write or program into the memory, each memory cell is isolated from any other with a thin oxide layer. Electric current is then injected into this layer, in order to break down the oxide and set a bit, making it possible to write the data. To erase the memory, a high voltage is applied to the memory cell, in order to reset the charge stored on the gate oxide.

Apart from programming and erasing functions, the JS28F640J3F75E includes other additional features such as Security ID, Block Lock bits, sleep mode (for power conservation) and read ID. All of these features make the JS28F640J3F75E an ideal choice for applications requiring secure data storage.