| Allicdata Part #: | KSC2335OTU-ND |
| Manufacturer Part#: |
KSC2335OTU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 400V 7A TO-220 |
| More Detail: | Bipolar (BJT) Transistor NPN 400V 7A 1.5W Through... |
| DataSheet: |  KSC2335OTU Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 7A |
| Voltage - Collector Emitter Breakdown (Max): | 400V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 600mA, 3A |
| Current - Collector Cutoff (Max): | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 1A, 5V |
| Power - Max: | 1.5W |
| Frequency - Transition: | -- |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Base Part Number: | KSC2335 |
Description
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KSC2335OTU is a single bipolar junction transistor (BJT) device which is mainly used for various applications. It has a three-leg construction made up of a base, collector, and emitter. The KSC2335OTU is a small signal NPN transistor rated with a maximum collector-emitter voltage of 40V, a max emitter-base voltage of 5V, and a max collector current of 500mA. These performance characteristics make it suitable for use in low-power amplifying and switching circuits.The working principle of the KSC2335OTU is based on the principle of a BJT. BJT transistors are formed with two p-n junctions between the base and collector and between the base and emitter. For an NPN transistor, the collector is connected to the positive voltage source VCC, the emitter is connected to the negative voltage source GND and the base is connected to the input voltage Vin. When a voltage is applied at the base, it injects minority carriers into the collector-emitter p-n junction, resulting in the conduction of a current from the collector to the emitter.The KSC2335OTU has a range of application fields including signal amplification and switching. In order to benefit from signal amplification, the input signal must be small enough so that the BJT can act as a controlled current and voltage regulator. An input signal of only 1µA is enough to drive the KSC2335OTU transistor. In switching applications, KSC2335OTU can be used to switch high currents or voltages by controlling the input voltage with an external digital logic signal. Because of its low saturation voltage, it can be the perfect device for driving circuit elements such as relays, motors, or lamps. The KSC2335OTU can also be used in linear circuits. In such circuits, the input voltage or current is amplified or reduced depending on the dominant amplification current, but also the values of the resistors that are connected to it. The input signal is applied to the base, and the amplified signal is taken from the transistor’s collector-emitter terminal. One of the main advantages of the KSC2335OTU is its easy to use. It does not require a current or voltage amplifier and it does not experience any breakdown when an excessively high base current is applied. With the KSC2335OTU transistor, a low power consumed device is ensured.The KSC2335OTU single bipolar junction transistor device is an ideal choice for low-power amplifying and switching circuits as well as linear circuits. Its three-leg construction and performance characteristics make it easy to use and suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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