Allicdata Part #: | KSC2883YTF-ND |
Manufacturer Part#: |
KSC2883YTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 1.5A SOT-89 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 1.5A 120MHz 1W Su... |
DataSheet: | KSC2883YTF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 30mA, 1.5A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 500mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
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KSC2883YTF Application Field and Working Principle
KSC2883YTF is a type of single bipolar transistor (BJT), which is most commonly used in power amplifier applications and in certain types of motor control systems. The KSC2883YTF is primarily used as a switching device, because it can handle high voltage, current, and temperature ratings. These transistors are ideal for applications where high voltage and high current are needed.
The KSC2883YTF transistor is made in a vertical PNP configuration, which means it contains a base, collector, and emitter for its internal circuitry. The collector is charge-injected from the base and the emitter is basically the output. The base-emitter junction is forward biased and controls the amount of current that flow from collector to emitter.
In the KSC2883YTF application, the collector-emitter behaves like an open switch when the base-emitter junction is forward-biased. This allows the transistor to act as an electronic switch, which can be used to control the on/off state of high voltage or current switching systems. Furthermore, it can also be used in various applications where high heat dissipation is needed such as motor control, power amplification, and other motor applications.
The working principle of the KSC2883YTF involves the conditions of the base-emitter junction. When the base-emitter junction is forward biased, it acts as an open switch and allows current from the collector to pass through to the emitter. This allows for voltage gain by using the transistor as an amplifying device, which makes it suitable for power amplifier applications. When the junction is reverse biased, current flow from the base to the emitter is blocked and the transistor becomes a low-impedance device, generating dissipated heat.
The KSC2883YTF is also useful for applications where high-frequency operation is desired. Due to its wide range of voltages and current ratings, it is able to withstand frequency response levels up to 100MHz. This makes it suitable for high-frequency applications such as radio frequency circuits, microwave circuits, and other similar electronic devices.
In conclusion, the KSC2883YTF is a type of single bipolar transistor that is well suited for applications where high voltage and current, as well as high-frequency performance are needed. It has a wide range of voltage and current ratings and can be used in various applications such as motor control, power amplification, and radio frequency circuits.
The specific data is subject to PDF, and the above content is for reference
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