KSC2682YS

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	180V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 10mA, 5V
Power - Max:	1.2W
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3
Base Part Number:	KSC2682

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1 IntroductionThe KSC2682YS is a medium power NPN epitaxial planar-type transistor, commonly found in electronic devices used for switching, amplifying, and modulation purposes. As part of the bipolar single transistor family, the KSC2682YS possesses a broad range of application capabilities and is suitable for a variety of working environments. This document will provide a brief overview of the KSC2682YS transistor and its application field, as well as its operating principle, in order to help the reader make an informed decision when selecting the KSC2682YS in place of other suitable transistors.2 Application FieldThe KSC2862YS transistor is suitable for applications such as amplifiers, RF amplifiers, modulation/switching, general purpose circuits, as well as circuits that require both strong switching abilities and high-frequency performance. The KSC2682YS is most commonly used in small-signal amplifier and switch circuits, as well as in similar circuits which require a wide variety of functions. Due to the wide range of capabilities in a single transistor, the KSC2682YS can be found in virtually any electronic device, from phones and TVs to computers and medical equipment.3 Working PrincipleThe KSC2682YS is a bipolar transistor, meaning that it uses a current controlling element with two semiconductor layers and one central layer. In the case of the KSC2682YS, it uses an NPN transistor, which consists of three parts: the Base (B), the Collector (C), and the Emitter (E). The Base is used to control the flow of current through the transistor. The Collector will allow current to flow into the Base, and the Emitter will allow current to leave the Base.The KSC2682YS works by allowing a small current from the Base to the Collector which will create a larger current from the Collector to the Emitter. The amount of current that flows from the Collector to the Emitter is determined by the amount of current flowing from the Base to the Collector. The KSC2682YS is able to further modulate and control the amount of current being passed through it by manipulating the Base current via a separate current source.4 ConclusionThe KSC2682YS is a medium power NPN epitaxial planar-type transistor, suitable for a wide variety of applications. This transistor is capable of amplifying, switching, and modulating, making it ideal for a variety of applications. The KSC2682YS works by allowing a small current to flow from the Base to the Collector, which then creates a larger current from the Collector to the Emitter. The amount of current that is passed through the KSC2682YS is determined by the amount of current passing through the Base.

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