KSC2752OS Allicdata Electronics
Allicdata Part #:

KSC2752OS-ND

Manufacturer Part#:

KSC2752OS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 0.5A TO-126
More Detail: Bipolar (BJT) Transistor NPN 400V 500mA 1W Throug...
DataSheet: KSC2752OS datasheetKSC2752OS Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 60mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3
Description

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The KSC2752OS is a single bipolar junction transistor (BJT) that is used in a range of applications, most notably in electronic circuits. It is widely used due to its excellent performance characteristics and its relatively low cost. The KSC2752OS is capable of switching a wide range of operating voltages, making it a great choice for many types of applications.

The KSC2752OS is a NPN transistor with a maximum rating of 800 mW. It has a maximum current gain of 50 and a maximum collector-emitter voltage of 60 volts. The maximum collector-base voltage of the KSC2752OS is 80 volts. It is a three-terminal device with a base, collector, and emitter. A resistor may be used in the base lead to control the amount of current that flows through the transistor.

The working principle of the KSC2752OS is based on the bipolar junction transistor (BJT) concept. The base of the transistor is used to control the amount of current flowing through the collector-emitter section, known as the active region. When a voltage is applied between the base and emitter of the KSC2752OS, a current flows through the base lead, resulting in an increased current between the collector and emitter. This increase is known as current amplification. The magnitude of the amplified current is proportional to the amount of bias applied to the base-emitter junction.

The KSC2752OS is most commonly used as a switch in applications such as switching relays, solenoids, and motors. The device can also be used for signal amplification in audio and video applications. Because of its high gain, it can be used for radio frequency (RF) amplification. The KSC2752OS can be used for power amplification in automotive, computer, and telecommunications applications.

The KSC2752OS can be used to construct multistage amplifiers, oscillators, and other circuits. These circuits are used in a variety of applications, such as medical equipment, military electronics, and consumer electronics. The KSC2752OS can also be used to construct programmable logic devices and other digital integrated circuits (ICs).

In conclusion, the KSC2752OS is a single bipolar junction transistor (BJT) that is used in a range of applications. It has a maximum current gain of 50 and a maximum collector-emitter voltage of 60 volts. The device is most suitable for use as a switch or for signal amplification. It can also be used for power amplification and to construct digital circuits. The KSC2752OS is an effective and economical transistor that can significantly increase the performance of an electronic circuit.

The specific data is subject to PDF, and the above content is for reference

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