KSC2310OTA Allicdata Electronics
Allicdata Part #:

KSC2310OTA-ND

Manufacturer Part#:

KSC2310OTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 150V 0.05A TO-92L
More Detail: Bipolar (BJT) Transistor NPN 150V 50mA 100MHz 800m...
DataSheet: KSC2310OTA datasheetKSC2310OTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSC2310
Description

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KSC2310OTA is a single-channel, low-voltage, high-speed, low-power and low-threshold voltage field effect transistor (FET), which is specifically designed to provide protection against Over Temperature and Over-Current conditions. It is designed to meet the requirements of various automotive applications such as lighting control, motor control, and power switch applications. This FET is ideal for providing linear, high-speed over-temperature and over-current protection in automotive and general-purpose applications.

The KSC2310OTA works by combining two complementary MOSFETs into a single package. The internal MOSFETs are optimized for maximum switch current and voltage ratings, and provide a symmetric current response. This FET provides an exceptionally low on-resistance and low leakage current, making it highly suitable for automotive, high-power, and industrial applications. This FET can also be used in low-power applications, where its low input and output capacitance ensures low power consumption.

The KSC2310OTA features a very low on-resistance and a low-threshold voltage for reduced power consumption and improved efficiency. This FET can be operated in linear, low-voltage, or high-current mode and provides smooth switching over all operating conditions. The low on-resistance ensures low loss and high power transfer efficiency. The FET also features an integrated thermal protection circuit, which protects the FET from overheating and failure.

The working principle of the KSC2310OTA is based on two key components, namely, the bipolar junction transistor (BJT) and the gate-driver circuit. The BJT works as a switch, which is able to control the flow of current through the device by changing its gate voltage. The gate voltage is determined by the gate-driver circuit. The gate-driver circuit powers the BJT, allowing it to switch at the desired voltage level. The BJT is used in conjunction with an output driver to control the load voltage. This allows the device to be used in applications such as lighting control, motor control, and power switch applications.

The KSC2310OTA is a single-channel, low-voltage, high-speed, low-power, and low-threshold voltage field effect transistor (FET). It is designed to meet the requirements of various automotive applications such as lighting control, motor control, and power switch applications. The FET features a very low on-resistance and a low-threshold voltage for reduced power consumption and improved efficiency. The FET also features an integrated thermal protection circuit, which protects the FET from overheating and failure. The KSC2310OTA is well-suited for automotive, high-power, and industrial applications, and is ideal for providing linear, high-speed over-temperature and over-current protection.

The specific data is subject to PDF, and the above content is for reference

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