Allicdata Part #: | KSC2316OBU-ND |
Manufacturer Part#: |
KSC2316OBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 120V 0.8A TO-92L |
More Detail: | Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900... |
DataSheet: | KSC2316OBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 100mA, 5V |
Power - Max: | 900mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSC2316 |
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KSC2316OBU is a single bipolar junction transistor (BJT) specifically designed by Taiwan-based industry-leading semiconductor manufacturer KSC Corporation. It is designed to operate in the same voltage range as other modern single BJTs, operating at up to 15V. KSC2316OBU is an excellent choice for applications that require an exceptionally low voltage, fast switching time, and low power consumption. This makes it an ideal component for applications in electric vehicles, robotic applications, and medical instrumentation.
KSC2316OBU has an exceptional collector-emitter breakdown voltage (BVCE) of up to 24V and a high current gain (hFE) of between 600 and 800 depending on the operating temperature. It also features a low-voltage-drop base-emitter junction, allowing for typically fast switching times of up to 14 nanoseconds. This is one of its most appealing features, as it helps prolong the component’s lifetime under conditions of high-frequency usage.
The functioning principle of KSC2316OBU is similar to other single BJT circuits. The component consists of a single base section (which is connected to a voltage supply) and two Collector-Emitter sections (which are connected to ground). When the base receives an input signal, a current flows through the base and into the Collector-Emitter circuits. This causes a voltage drop in the Collector-Emitter sections due to the junction’s low-voltage-drop characteristics. This voltage drop activates the Collector-Emitter sections, allowing current to flow through them. The end result is the transformation of the input signal into a voltage or current output.
KSC2316OBU is an excellent choice for applications that require a low-voltage, fast switching time, and low power consumption. It is particularly suitable for use in electric vehicles, robotic applications, and medical instrumentation. It is also an ideal component for automotive ECU and TECU circuits, due to its fast switching time and high current gain. Furthermore, its low BVCE and low-voltage-drop base-emitter junction design make it an incredibly reliable component for any application requiring high-frequency usage.
The specific data is subject to PDF, and the above content is for reference
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