L6386

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Power management integrated circuits (PMICs) form the backbone of a majority of electronic appliances and devices. Gate drivers are an important component of PMICs, responsible for providing the necessary current to drive the gate of MOSFETs and IGBTs. The L6386 gate driver is a device designed specifically for PWM control of power MOSFETs and IGBTs in switching power supplies and radio frequency (RF) applications.

L6386 Application Field and Working Principle

The L6386 is suitable for a wide range of applications, including switching power supplies, LED lighting, DC/DC converters, motor control, RF power amplifiers and RF power supplies. It is capable of driving power MOS/IGBTs with up to 5A peak current, and up to 20V drain-source voltage (Vdss). It can be used both in AC and DC circuit configurations, with a minimum On/Off times of 5µs and 10µs respectively. The resistance and thermal characteristics of the device are also excellent, with a low Ron impedance of 0.3Ω.

The working principle behind the L6386 device is based on a simple architecture. It uses CMOS technology as the basis of its design, which allows for superior efficiency and performance. This is combined with an integrated gate driver and level shifter, as well as an inherent level shifter. The circuit is designed to alternately turn on and off the gateelectrodes of the power MOS/IGBTs, so that they can switch at extremely fast speeds. The current level is adjusted by turning the gate driver current on and off based on the PWM signal it receives. This allows the device to drive higher currents with minimal losses.

The L6386 has several features that make it suitable for use in a variety of applications. It includes a high turn-on voltage range of 5V to 28V, which allows for efficient operation of power MOS/IGBTs with a Vdss of up to 20V. It also includes a low ON-resistance (Ron) of 0.3Ω, which helps minimize power loss in the circuit. Additionally, the internal level shifter ensures that the gate drivers can be easily interfaced with a wide range of logic levels.

In addition to its high efficiency, the L6386 is also very reliable. It has a maximum EMCV threshold of 20mV, which is significantly higher than the EMCV of most other gate drivers, and a junction temperature of up to 150°C. This protects the device from damage due to excessive heat and allows it to operate effectively in harsh environments.

Overall, the L6386 gate driver is a reliable and efficient device for driving power MOS/IGBTs in a variety of applications. Its features and characteristics make it ideal for use in switching power supplies, LED lighting, DC/DC converters and RF power amplifiers.

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