L6389ED

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PMIC - Gate Drivers

L6389ED is an advanced high side and low side Gate driver designed to drive a power MOSFET or IGBT in a half-bridge configuration. This device is especially suitable to drive networks such as LED chains, DC-DC converters, and motor control applications. It has a wide operating range from 8 V to 45 V and can drive up to 4 A outputs. It features a logic-controlled shoot-through protection, diagnostic feedback, and over-current protection.

The L6389ED features a wide bidirectional operating voltage range, from 8 V up to 45 V, meaning it can operate from an output voltage in the battery domain up to the rail voltage of a dc-dc converter. The output high side and low side gate drivers are independently programmable to achieve symmetric operation and slow turn off, allowing the device to operate at higher frequencies and decreasing the thermal stress of the transistor.

The device has an embedded shoot-through protection, which halts the high side and low side outputs when both are active. This feature prevents short circuits on the transistors, increasing safety, and enables higher efficiency of the circuit. Additionally, the device has an embedded thermal protection, which automatically reduces the peak current of the low side output until the junction temperature returns to an acceptable level.

The L6389ED is highly integrated and easy to use. All the device features are controlled through a SPI interface. Furthermore, diagnostic feedback provides current, temperature, and fault information via the SPI.

The L6389ED is ideal for controlling the power stage of a wide variety of applications. It can be used for driving LED chains, servos, motors, and other power electronics applications. Additionally, it can be used in a wide variety of DC-DC converters, from low-power converters for internal battery charging to more power converters for power boost converters.

Working Principle

The L6389ED is a half-bridge Gate driver, meaning it can drive both the high side and low side MOSFETs or IGBTs. The device can be configured to drive either an N- or P-channel MOSFET or an N- or P-channel IGBT. In order to enable the full bridge, both the high side and low side outputs need to be enabled. The gates of the transistors are driven independently, meaning the high and low side outputs can be on or off at the same time, allowing for slow turn off of the transistors.

The device features two integrated current sources, one for the high side and one for the low side output, enabling a constant current to be driven through the MOSFET or IGBT gates, regardless of their capacitance. This ensures consistent switching performance, without having to adjust for the capacitance of the MOSFET.

The device features an integrated shoot-through protection, which prevents both the high side and low side outputs from being active at the same time. When both outputs are enabled, the device will sense the voltage on the gate of both transistors and shut off the high side output in order to prevent a short circuit on the transistors.

The device also features an integrated over-current protection, which shuts off the outputs if the peak current exceeds a programmable limit. This is especially useful in applications where the peak current needs to be limited in order to keep the junction temperature at an acceptable level.

In addition to the shoot-through protection and over-current protection, the device has an embedded temperature sensor, which can be used to reduce the peak current of the low side if the temperature reaches a certain threshold. This ensures that the device does not exceed its specified temperature range.

The L6389ED is a highly integrated device, with all the features needed to drive MOSFETs or IGBTs in a half-bridge configuration. It has a wide operating range from 8 V to 45 V, it can drive up to 4 A outputs, and it features a logic-controlled shoot-through protection, diagnostic feedback, and over-current protection.

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