L6389EDTR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Driven Configuration:	Half-Bridge
Channel Type:	Independent
Number of Drivers:	2
Gate Type:	IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply:	17V (Max)
Logic Voltage - VIL, VIH:	1.1V, 1.8V
Current - Peak Output (Source, Sink):	400mA, 650mA
Input Type:	Inverting
High Side Voltage - Max (Bootstrap):	600V
Rise / Fall Time (Typ):	70ns, 40ns
Operating Temperature:	-45°C ~ 125°C (TJ)

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Introduction

The L6389EDTR is a 3.2A non-inverting Gate driver IC from STMicroelectronics. The device has two independent channels, each capable of driving up to 3.2 Amps with a peak current of 4.5 Amps. The L6389EDTR offers a high level of protection against over-temperature. Additionally, it is versatile and can be used in a wide range of applications, including motor control applications, garage door openers, AC/DC converters and UPS systems. This article aims to discuss the application field and working principle of the L6389EDTR.

Application Field

The L6389EDTR Gate driver IC is designed to drive low-power MOSFETs, IGBTs and other low-power switching devices. It is also suitable for use in pulse-width modulation (PWM) applications such as motor control, as well as in DC/DC and AC/DC converters. The L6389EDTR provides a suite of features including over-temperature protection and various configurable pins for specific applications. This offers users flexibility and versatility when using it in multiple applications. The L6389EDTR is also well suited for applications where fast switching speeds are needed. This includes garage door openers, motor control applications and low-power UPS systems. The device is capable of providing hard switching speeds of up to 150kHz, enabling the use of relatively high PWM frequencies. This can be a major advantage when there is the need to reduce audible noise and vibration in the application.

Working Principle

The L6389EDTR Gate driver is composed of two independent drivers, each capable of driving up to 3.2 Amps with a peak current of 4.5 Amps. Each driver consists of an active low side MOSFET connected to the PWRGND pin, a floating high side MOSFET connected to the PWM input, and control logic and protection circuits. The active low side MOSFET is connected to the PWRGND pin, and provides an adjustable current source for the Gate driver. This feature allows the user to set the minimum and maximum current limit, protecting the load device from over-current conditions. The high side MOSFET is connected to the PWM input, which is used to control the Gate driver. The control logic consists of an internal voltage regulator and various internal protection circuits that control the current flow and prevent over temperature.

Conclusion

The L6389EDTR from STMicroelectronics is a 3.2A non-inverting Gate driver IC designed to drive low-power MOSFETs, IGBTs and other low-power switching devices. The device is composed of two independent drivers, each capable of driving up to 3.2 Amps with a peak current of 4.5 Amps. The L6389EDTR offers a high level of protection against over-temperature and is suitable for use in pulse-width modulation (PWM) applications, DC/DC and AC/DC converters as well as high speed switching applications. Overall, the L6389EDTR provides a high level of performance in a variety of applications. This makes it an ideal choice for motor control and switching applications that require fast switching speeds and robust over-temperature protection.

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