Allicdata Part #: | LM5113TMX/NOPB-ND |
Manufacturer Part#: |
LM5113TMX/NOPB |
Price: | $ 1.39 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Texas Instruments |
Short Description: | IC GATE DRVR HALF BRDG 5A 12SMD |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 12-µSMD (... |
DataSheet: | LM5113TMX/NOPB Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 1.26356 |
Input Type: | Non-Inverting |
High Side Voltage - Max (Bootstrap): | 107V |
Rise / Fall Time (Typ): | 7ns, 1.5ns |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 12-WFBGA |
Supplier Device Package: | 12-µSMD (1.74x1.87) |
Base Part Number: | LM5113 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Driven Configuration: | Half-Bridge |
Channel Type: | Independent |
Number of Drivers: | 2 |
Gate Type: | N-Channel MOSFET |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Logic Voltage - VIL, VIH: | 1.76V, 1.89V |
Current - Peak Output (Source, Sink): | 1.2A, 5A |
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The LM5113TMX/NOPB is a highly integrated gate-driver monolithic IC designed primarily for three-phase high- and low-side driver applications in industrial motor drive control. It contains five high-current gate driver stages and several high side current sense amplifiers. The device features integrated under-voltage lockout and high-side current sense amplifier for the five high-side drivers.
The LM5113 is a high- or low-side gate driver that can drive MOSFETs up to 70A. The gate drive circuitry is designed to reduce switching losses, providing maximum efficiency and minimum electromagnetic interference. With 2.7V-5.5V voltage supply, the device provides over-current, under-voltage and short-circuit protection from output short-circuits and over-loads. The integrated slew-rate control circuit provides optimum dymanic performance for a wide variety of applications. This device also features a critical conduction mode operation (DCM) for low losses at switching transitions and for high-frequency control of the power MOSFET. The improved EMI performance of the device results from minimized capacitance and cross-conduction between the outputs, which reduces both conducted and radiated interference.
The LM5113 is designed to work with a maximum output voltage of +28V and a minimum output voltage of -20V, with three channel inputs corresponding to the high- and low-side MOSFETs. It can provide gate drive to a variety of MOSFETs with gate-source voltage up to +30V. Each channel of the device has an independent output-on capability and can be controlled, either actively or passively, by two logic inputs.
The LM5113 also features enhanced under-voltage lockout protection, with over-voltage, over-current, and over-temperature protection. The device has an integrated thermal protection mechanism that triggers at over-temperature and automatically shuts down a detected fault. Under-voltage protection is achieved by monitoring the drain/source voltage, and when it drops below the device Vthreshold, the gate drive is shut off.
The LM5113 is suitable for a variety of industrial motor drive applications, such as AC and DC drives, converters, power supplies, etc. It is capable of driving a wide range of motors up to 70A, with low losses and high EMI performance. Besides, the device can also be used for controlling of high-side current sense amplifiers, providing both over- current and under-voltage protection with a single circuit.
The LM5113 is a versatile gate-driver IC and can be used in many applications. It can be employed in Solar System and EV/HEV applications, motor control, lighting applications and so on. With its improved EMI performance, wide gate drive range, and integrated fault protection, the device is an ideal solution for motor control systems and other applications that demand reliability and high performance.
The specific data is subject to PDF, and the above content is for reference
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