MA4P1200NM-401T Discrete Semiconductor Products |
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Allicdata Part #: | 1465-1223-2-ND |
Manufacturer Part#: |
MA4P1200NM-401T |
Price: | $ 4.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | NON MAGNETIC AXIAL LEAD CERAMIC |
More Detail: | RF Diode PIN - Single 100V 1.5W Axial |
DataSheet: | MA4P1200NM-401T Datasheet/PDF |
Quantity: | 5000 |
1000 +: | $ 3.61463 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 100V |
Capacitance @ Vr, F: | 1.5pF @ 50V, 1MHz |
Resistance @ If, F: | 750 mOhm @ 50mA, 100MHz |
Power Dissipation (Max): | 1.5W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MA4P1200NM-401T is a type of high-performance PIN diode which widely used in the high frequency field of telecommunications. It is an important element of the microwave communication module, used for low noise attenuation and switching.
Application Field
MA4P1200NM-401T diode is widely used in RF Radio and TV technology, satellite communication, mobile communication, radar and navigation system, high-speed data and imaging systems, surface acoustic wave filters, high-speed switching systems and digital transmission systems. Due to its excellent features of low noise, fast transition time and different attenuation characteristic, MA4P1200NM-401T diode can precisely control the power of signal from a wide range of frequency from 0.1GHz to 18GHz, and is widely used in various applications.
Working Principle
MA4P1200NM-401T diode is based on a modified PIN diode structure, which can provide low noise, fast transition time and different attenuation characteristics. It is highly reliable and accurate when working in small signal attenuation or switching circuits. When the signal frequency is higher than 0.1GHz, the internal capacitance of the PIN diode is low while the resistance is high. When the voltage is applied to the diode, the main resistance is reduced by the reverse bias and the signal is allowed to pass, thus resulting in the desired characteristics.
In addition, the high temperature stability of MA4P1200NM-401T diode allows it to work reliably in high temperatuers, and the robust construction allows it to be used in higher power applications, making it ideal for applications in microwave transmission where mechanical, thermal and electrical stress must be considered. Furthermore, this diode is also offerred in an optional shielded package for further enchancements in EMI/RFI performance.
Conclusion
Overall, MA4P1200NM-401T diode is a versatile RF PIN diode that enables high performance and low noise operation, making it a great choice for a wide range of applications where high speed, low power consumption and high reliability are essential. Its high-performance features makes it an ideal choice for modern communications and high-speed digital systems.
The specific data is subject to PDF, and the above content is for reference
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