MA4P7455-1225T Discrete Semiconductor Products

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The MA4P7455-1225T is an RF diode with a variety of applications in radio frequency technology. It is a four-pin dual Schottky diode that is capable of withstanding high levels of power, making it an ideal choice for applications where high frequencies are used.

Specifically, the MA4P7455-1225T is designed for use at low frequency (1.0 GHz to 1.2 GHz) and is considered a reliable technology for analog and digital radio frequency applications. The diode is suitable for digital signal separating and also makes a dependable choice for medium-power radio-frequency amplifiers and frequency dividers. Moreover, it is rated for 20mA at 5V, and its capacitance rating is 10pF at 100MHz.

As for its working principle, the MA4P7455-1225T is a dual Schottky diode configured in a bridge. This configuration enables the diode to have a “zero threshold voltage”, which means that it can conduct current even when the reverse voltage applied to the diode is zero. The diode also has an “output capacitance”, which is the capacitance of the diode when the reverse voltage is applied.

In the MA4P7455-1225T, the two diodes are connected in series, with the anode connected to ground. When the diode is forward-biased, current flows through the two diodes and is detected as a voltage across the diode. This voltage is used as the input signal and can be amplified to the required level. The reverse direction works similarly, as when the reverse voltage is applied, current flows in the opposite direction.

The MA4P7455-1225T is ideal for commercial and industrial applications when used for RF signal separating and amplifying. It has a high power handling ability and works well at temperatures ranging from -55°C to 135°C. Additionally, the diode is highly reliable, with an expected life cycle of 100 million hours. Its compact size also makes it easy to install and use in various types of circuits.

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