MA4P604-131 Allicdata Electronics
Allicdata Part #:

1465-1044-ND

Manufacturer Part#:

MA4P604-131

Price: $ 4.95
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: DIODE PIN CHIP CERAMIC SI
More Detail: RF Diode PIN - Single 1000V Die
DataSheet: MA4P604-131 datasheetMA4P604-131 Datasheet/PDF
Quantity: 400
100 +: $ 4.45221
300 +: $ 4.09122
500 +: $ 3.73023
1000 +: $ 3.24891
Stock 400Can Ship Immediately
$ 4.95
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 1000V
Capacitance @ Vr, F: 0.3pF @ 100V, 1MHz
Resistance @ If, F: 1 Ohm @ 100mA, 100MHz
Operating Temperature: 175°C (TJ)
Package / Case: Die
Supplier Device Package: Die
Description

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The MA4P604-131 is a microwave diode that is primarily used in RF applications. Generally, diodes are electrical components that allow current to flow in one direction while blocking it in the opposite direction. In the case of the MA4P604-131, this diode possesses a low noise figure and high frequency stability that enable it to be used in a variety of RF applications.

The MA4P604-131 has a reverse current leakage of no more than 60 μA. This means that current is blocked in the opposite direction, preventing any electricity from flowing back into the circuitry. Additionally, it has a forward voltage drop of no more than 0.8 volts at 250 mA, which allows it to be used in a variety of applications.

One of the most important features of the MA4P604-131 is its noise figure. This diode has a noise figure as low as 0.6 dB. This means that it can be used in applications requiring a high level of signal to noise ratio such as satellite communications, broadband amplifiers, and telecom receivers. Additionally, its high frequency stability enables it to be used in high-bandwidth applications such as DTV transmission systems.

The MA4P604-131 is constructed from a gallium arsenide material and has a maximum drain current of 250 mA. This diode also features an ambient temperature range of -55°C to +90°C, which makes it suitable for a wide range of applications. Additionally, it can handle a maximum power of 5 Watts.

The MA4P604-131 is designed to operate at 2.3 - 2.7 GHz frequencies and has a total power gain of 11dB at drain voltages up to 10V and drain currents up to 250mA. This high power gain, coupled with its low noise figure, makes it suitable for applications requiring high levels of amplification. Additionally, its low reverse current leakage, high transmission frequency stability, and wide temperature range make it an ideal choice for a variety of applications.

The working principle of the MA4P604-131 is relatively simple. The diode works as a one-way valve, allowing current to flow in one direction while blocking it in the opposite direction. This allows the diode to act as an amplifier, allowing it to be used in a variety of applications.

In conclusion, the MA4P604-131 is a popular microwave diode that is primarily used in RF applications. This diode possesses low noise figure, high power gain, and high frequency stability that make it ideal for a variety of high performance applications. Additionally, its high reverse current leakage and wide temperature range make it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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