Allicdata Part #: | 1465-1226-2-ND |
Manufacturer Part#: |
MA4P1450-1091T |
Price: | $ 6.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | DIODE PIN CERAMIC SI |
More Detail: | RF Diode PIN - Single 100V 10W |
DataSheet: | MA4P1450-1091T Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 5.81899 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 100V |
Capacitance @ Vr, F: | 2.5pF @ 50V, 1MHz |
Resistance @ If, F: | 750 mOhm @ 50mA, 100MHz |
Power Dissipation (Max): | 10W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Package / Case: | 2-SMD |
Supplier Device Package: | -- |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MA4P1450-1091T is an NPN Bipolar junction transistor (BJT) designed for broadband rf applications such as amplifiers and oscillators. It has a built-in voltage regulator and is designed with a high frequency impedance characteristic that is superior to that of ordinary transistors, making it particularly suited for use in rf amplifiers.
The device is mainly used for radio-frequency applications up to 110MHz, including amplifiers, mixer and oscillator applications. It has low noise operation and is available in a through-hole package for easy placement.
The MA4P1450-1091T consists of an NPN transistor, a voltage regulator, and a high frequency impedance characteristic, which allows it to be used for broadband applications. The device is capable of operating up to 10A peak, with a maximum voltage of 110MHz. The device is designed to provide a good linearity, high gain and low noise performance.
The main feature of the MA4P1450-1091T is its high frequency input impedance, which is due to the NPN transistor and the voltage regulator, as well as its high gain and low noise characteristics. The high input impedance enables the device to work with wideband signals, thus providing a better signal-to-noise ratio than ordinary transistors.
The transistor is designed to operate in a common emitter configuration, where the collector current is directed by the base voltage. The high frequency response of the transistor is due to the combination of the collector current and base voltage, which gives the device the ability to work with wideband signals despite its small size.
The voltage regulator is there to maintain the transistor\'s high frequency performance. The voltage regulator ensures that the base-emitter voltage of the transistor is kept constant, allowing the transistor to maintain its large gain at high frequencies. The voltage regulator also eliminates the need for a separate power supply for the device.
The MA4P1450-1091T can also be used in oscillator applications. The device has a high gain-bandwidth product, which allows it to be used for high frequency oscillations. Oscillator configurations are typically used to produce sinusoidal or triangle-like waveforms, which can be used in audio, video, or military communications.
The MA4P1450-1091T has a wide range of applications in RF and broadband applications. It can be used for low noise amplifiers, oscillators, and impedance matching circuits. Its small size and high frequency impedance make it well suited for portable radio and other applications that require a reliable signal.
The specific data is subject to PDF, and the above content is for reference
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