MA4P161-134

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Type:	PIN - Single
Voltage - Peak Reverse (Max):	100V
Capacitance @ Vr, F:	0.1pF @ 50V, 1MHz
Resistance @ If, F:	1.5 Ohm @ 10mA, 500MHz
Operating Temperature:	175°C (TJ)
Package / Case:	Die
Supplier Device Package:	Die

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Introduction The MA4P161-134 is a GaAlAs monolithic, planar-diffused, Schottky Barrier, negative-resistance double-barrier diode and a chip with a very small size. It is applicable to FM radio modulation and demodulation, high-frequency signal generator, transmitter and other high-frequency communication systems. It can also be used in range-perception systems and wide-band signal generators and other RF application. Application FieldThe MA4P161-134 is a chip with a very small size and high performance and is not affected by temperature or time. It is widely used in FM transmitter, FM receiver, RF power amplifier, and RF signals generator, etc. The MA4P161-134 chip is available in a variety of packages such as standard digital, SOIC8 and TO-263 packages. Moreover, the chip has a digital/analog combination mode, making it one of the most widely used chips for FM transmitter, FM receiver, and other high-frequency application.Working PrincipleThe MA4P161-134 chip is made of two Schottky barrier diodes connected in the opposite direction. It is a negative-resistance diode with the negative resistance property, which influences the amplitude and frequency of the signal.Specifically, when the applied voltage during switching of the MA4P161-134 is kept below the breakdown voltage, a low impedance structure is formed and the voltage applied to the chip doesn\'t increase. However, when the applied voltage exceeds the breakdown voltage, a high impedance structure is formed and the voltage rises in a very short time and the negative resistance of the diode is formed. At this stage, the amplitude of the RF signal remains relatively constant while the frequency decreases.Therefore, the MA4P161-134 can be used to modulate and demodulate the FM signals generated in a variety of situations, such as range-perception and wide-band signal generators etc. In addition, it is also used to control the power of the high-frequency signal applied in the transmitter and high frequency communication systems, making it ideal for high frequency applications.ConclusionIn conclusion, the MA4P161-134 is a GaAlAs monolithic, planar-diffused, Schottky Barrier, negative-resistance double-barrier diode and a chip with a very small size. It can provide stable performance with high frequency applications, and its combination of digital/analog mode makes it suitable for a variety of applications, such as FM transmitter, FM receiver, RF power amplifier and RF signals generator, etc. The negative resistance property of the MA4P161-134 provides an excellent modulating effect on the signals generated by range-perception or wide-band signal generators and also makes it suitable to control the power of high frequency signals.

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