MA4P7002F-1072T Discrete Semiconductor Products

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Active
Diode Type:	PIN - Single
Voltage - Peak Reverse (Max):	200V
Capacitance @ Vr, F:	--
Resistance @ If, F:	900 mOhm @ 100mA, 100MHz
Power Dissipation (Max):	10W
Operating Temperature:	-55°C ~ 175°C (TJ)
Package / Case:	2-SMD
Supplier Device Package:	--

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<p>The MA4P7002F-1072T is a high-performance RF diode that is widely used in numerous applications. It has a low noise figure, high isolation, low intermodulation distortion, and excellent operational characteristics for both analog and digital communication systems. The diode is also capable of operating in a wide voltage range and its frequency range extends from 10 kHz - 72 GHz.</p> <p>The MA4P7002F-1072T is designed for wide-range applications including signal conversion, signal mixing, signal amplification, and RF switching. It is used in various radio frequency (RF) applications such as cellular, wireless, navigation, and satellite communication system. The RF diode is also suitable for use in high frequency radio transmitters and receivers, medical imaging equipment, military communication systems, and test and measurement instrumentation.</p> <p>The basic construction of the MA4P7002F-1072T includes a junction diode, a varactor diode, and a bias junction. The junction diode is responsible for conducting current under forward bias and blocking current under reverse bias. The varactor diode is responsible for creating a capacitance between the anode and the gate of the diode that varies depending on the voltage applied to it. Finally, the bias junction is responsible for putting the entire device in active operating mode.</p> <p>The working principle of the MA4P7002F-1072T diode is such that it allows RF current to flow between its two terminals (anode and gate). When a bias voltage is applied to the bias junction, the junction diode conducts forward current. At the same time, the varactor diode creates a capacitance between the anode and the gate that varies depending on the bias voltage. The rise and fall of the bias voltage changes the capacitance between the two terminals, which in turn modulates the RF current. This modulation, when combined with the RF input, produces the desired output signal.</p><p>The MA4P7002F-1072T is an important component in many digital and analog applications due to its wide frequency range and excellent performance characteristics. It is ideal for applications such as signal conversion, signal mixing, signal amplification, and RF switching. Additionally, its low noise figure, high isolation, low intermodulation distortion, and wide voltage range make it a suitable choice for many RF applications.</p>

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