Allicdata Part #: | 1465-1227-2-ND |
Manufacturer Part#: |
MA4P4001F-1091T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | DIODE PIN SMT CERAMIC |
More Detail: | RF Diode PIN - Single 100V 7.5W |
DataSheet: | MA4P4001F-1091T Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 100V |
Capacitance @ Vr, F: | -- |
Resistance @ If, F: | 500 mOhm @ 100mA, 100MHz |
Power Dissipation (Max): | 7.5W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Package / Case: | 2-SMD |
Supplier Device Package: | -- |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MA4P4001F-1091T is a high performance component used in a variety of applications. It is a high-power two-terminal RF diode that is used in a variety of applications including amplifiers, transmitters, receivers, and more. It is a wide-band diode that operates from 50 MHz to more than 1 GHz. The diode is designed specifically for high RF power applications and provides excellent RF power handling capability and impedance control. In addition, the MA4P4001F-1091T has a high linearity and power rating, so it can be used in both high-power and low-power applications.
The MA4P4001F-1091T is a two-terminal RF diode that operates at high power levels. The diode is constructed from a high power RF diode with a high RF power capability. The diode has a wide Frequency Response that allows it to be used in a variety of application scenarios. The diode has a high power handling capability and impedance control. This makes it ideal for use in amplifiers, transmitters, receivers, and more. The diode\'s RF power capability allows it to be used in both high-power and low-power applications.
When the MA4P4001F-1091T is used in an amplifier, it works as a current source. The diode is designed with a high impedance, so that when a signal is applied to the diode it can amplify it. This is done by using a rectification effect that creates a voltage across the diode. The amplifier uses the voltage and current provided by the diode to amplify the signal. This causes the signal to become much larger and more powerful.
When the MA4P4001F-1091T is used in a transmitter, it operates as an oscillator. The diode is designed to produce an oscillating electric field in response to the signal applied to it. This creates an alternating current that can be used to power the transmitter. The alternating current is then used to create the transmission signal.
When the MA4P4001F-1091T is used in a receiver, it operates as an attenuator. The diode is designed to reduce the power of the incoming signal. This is done by using a rectification effect, which creates a voltage across the diode. The voltage is then used to adjust the power of the incoming signal. This is beneficial as it reduces interference and noise, allowing the receiver to pick up more clearly the signal it needs.
The MA4P4001F-1091T is a very versatile component that has a wide range of applications. It is a high-power two-terminal RF diode that is designed for high RF power applications and excellent RF power handling and impedance control. The diode has a wide Frequency Response, making it suitable for use in a variety of applications such as amplifiers, transmitters, receivers, and more. The diode is also ideal for use in both high-power and low-power applications.
The specific data is subject to PDF, and the above content is for reference
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