MA4P505-1072T Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MA4P505-1072T is a wideband GaAs amplifier diode, which is mainly used in communications, signal processing, instrumentation and radar. It features high gain, linearity, low noise and low distortion. This makes it an ideal choice for applications such as receivers, frequency multipliers or pre-amplifiers in RF systems.

The MA4P505-1072T amplifier diode works on the principle of field effect transistor (FET). In this type of amplifier, the voltage placed on the gate of the transistor controls the current flowing through the source and drain. This voltage is determined by the external components, like capacitors and resistors, which are connected to the diode. The FET amplifier is therefore an adjustable voltage amplifier, allowing for different levels of amplification to be achieved.

The wideband characteristics of the MA4P505-1072T provide a gain of up to 18 dB with a bandwidth of up to 5 GHz. The wide frequency range enables it to be used in multiple different applications. It can be used in satellite systems, mobile telephone systems and terrestrial communication links. It can also be used in frequency multipliers for generating higher order frequencies, allowing for baseband data transmission.

The MA4P505-1072T is also well suited for use in radar systems, offering a high level of gain and good linearity. The large bandwidth enables it to be used in multiple different frequency bands, making it suitable for use in a wide array of applications. The positioning of the two gates and the optional bias tee connection allows for precise tuning and flexibility.

In addition to being suitable for a wide range of applications, the MA4P505-1072T amplifier diode also offers good noise and distortion figures. This makes it an excellent choice when high performance is required from the amplifier. It also has low power consumption and is able to operate over a wide temperature range.

The amplifier diode also features a hermetically sealed package for improved reliability and durability. This helps to ensure that the amplifier can operate in harsh conditions and ensures a long operating life. Additionally, the hermetic seal helps to protect against moisture and corrosion, further improving the performance and reliability of the amp.

Overall, the MA4P505-1072T amplifier diode is an excellent choice for a wide range of RF applications, offering high performance and reliability in a wide variety of situations. It is a great choice for applications such as satellite systems, mobile phones and radar systems. With its wide bandwidth, low noise and good linearity, it is well suited to multiple different applications and is able to deliver excellent results.

The specific data is subject to PDF, and the above content is for reference