Allicdata Part #: | 1465-1039-ND |
Manufacturer Part#: |
MA4P4002B-402 |
Price: | $ 12.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | DIODE PIN CERAMIC AXIAL HI-PAX |
More Detail: | RF Diode PIN - Single 200V 2.5W Axial |
DataSheet: | MA4P4002B-402 Datasheet/PDF |
Quantity: | 500 |
1 +: | $ 10.89270 |
10 +: | $ 9.90360 |
25 +: | $ 9.16097 |
100 +: | $ 8.41806 |
250 +: | $ 7.67529 |
500 +: | $ 7.18011 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 200V |
Capacitance @ Vr, F: | -- |
Resistance @ If, F: | 500 mOhm @ 100mA, 100MHz |
Power Dissipation (Max): | 2.5W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MA4P4002B-402 is a RF diode that is used for a variety of applications. The MA4P4002B-402 has an impressive array of features and capabilities that make it an ideal choice for many types of applications. This article will take an in-depth look at the application field and working principle of the MA4P4002B-402.
Applications Of The MA4P4002B-402
The MA4P4002B-402 is a RF diode that is suitable for use in a variety of application fields. Some of the common applications include, but are not limited to, RF switches, frequency multipliers, limiters, detectors, and mixer circuits. Additionally, it can be utilized in receiver, medical, automotive, and communications systems and can serve as a power amplifier, oscillator, and modulator.
Working Principle Of The MA4P4002B-402
The working principle of the MA4P4002B-402 is an adaptation of avalanche breakdown. This adaptation is utilized to achieve low power consumption and high frequency switching speeds, both of which are ideal when applied to RF diode applications. Essentially, the MA4P4002B-402 works by applying a reverse direct current (DC) bias across its terminals. This bias causes a low intensity electric field to form, which will eventually cause avalanche breakdown. As the electric field intensity increases, the avalanche breakdown allows for higher current flow based on the amount of voltage across the RF diode.
In addition to its implementation of avalanche breakdown, the MA4P4002B-402 also features a low capacitance and low contact resistance, which means that it is more efficient than the standard avalanched breakdown diodes. This efficiency allows for faster switching times, which makes the MA4P4002B-402 ideal for many RF applications. Additionally, the MA4P4002B-402 can handle high power signals, making it suitable for a number of power amplifier applications.
Conclusion
The MA4P4002B-402 is a RF diode that is suitable for use in a variety of applications. It is designed to handle high power signals and features an efficient adaptation of avalanche breakdown, low capacitance and low contact resistance. The MA4P4002B-402 is an ideal choice for RF switches, frequency multipliers, limiters, detectors, mixer circuits, receivers, medical equipment, automotive systems and communications systems.
The specific data is subject to PDF, and the above content is for reference
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