MA4P404-132

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Type:	PIN - Single
Voltage - Peak Reverse (Max):	250V
Capacitance @ Vr, F:	0.2pF @ 50V, 1MHz
Resistance @ If, F:	700 mOhm @ 50mA, 500MHz
Operating Temperature:	175°C (TJ)
Package / Case:	Die
Supplier Device Package:	Die

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Introduction

The MA4P404-132 is a low choke current, balanced element, GaAs Enhancement-mode pHEMT (pseudomorphic High Electron Mobility Transistor) which operates from 0.7 to 2.7 GHz and offers very low noise performance. The device is fabricated with advanced process technologies including 2nd harmonic and frequency tripling Bi-FETs, proven silicon nitride passivation for reliability and SiO2 passivation for enhanced RF performance. The device has a low output impedance and high drive capability, making it ideal for applications involving significant system losses due to frequencies, cables and other components. Its low input capacitance and low noise figure make it an ideal choice for microwave and other high frequency applications.

Application fields

The MA4P404-132 is suitable for a wide range of applications, including microwave and other high frequency communications and systems, where high RF performance is required. Its features make it suitable for use in various millimetre wave systems, including satellite communications, ultra-wideband communications networks, X-band communicatios systems, satellite communications systems, and other high power, high frequency applications. In addition, due to its low noise and low power consumption, the MA4P404-132 is also well suited to military, aerospace and other demanding high performance applications.

Working Principle

The MA4P404-132 is an Enhancement-Mode pHEMT device that is fabricated using advanced process technologies. The device\'s performance is based on the fact that its gate is connected to the drain so that a voltage applied to the gate results in a corresponding current flow from the drain to the source. When a voltage is applied to the gate, the threshold voltage at which the current flow from the drain to the source starts is determined by the material properties of the device and the applied voltage. The device operates in a two-dimensional depletion region when a voltage is applied to the gate, allowing electrons to pass from the drain to the source. The depletion region has an average thickness determined by the applied voltage, and the current flow is modulated by the depletion region\'s capacitance.The main advantage of using the MA4P404-132 is that it can operate in a wide temperature range and it provides excellent RF performance. Due to its low input capacitance and high drive capability, the device offers superior performance in many applications, especially when used in combination with a low loss, high frequency matching network. Furthermore, its low noise figure makes it suitable for a wide range of applications.

Conclusion

The MA4P404-132 is a low choke current, balanced element, GaAs Enhancement-mode pHEMT device. Its features make it suitable for a wide range of microwave and other high frequency communications and systems applications, including satellite communications, ultra-wideband communications networks, X-band communicatios systems, satellite communications systems, military, aerospace and other demanding high performance applications. The device has a low output impedance and high drive capability, making it ideal for applications involving significant system losses due to frequencies, cables and other components. Its low input capacitance and low noise figure make it an ideal choice for microwave and other high frequency applications.

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