MA4P7433-1141T Allicdata Electronics

MA4P7433-1141T Discrete Semiconductor Products

Allicdata Part #:

1465-1238-2-ND

Manufacturer Part#:

MA4P7433-1141T

Price: $ 0.19
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: DIODE PIN PLASTIC LEADFREE
More Detail: RF Diode PIN - Single 75V 150mA 200mW SOD-323
DataSheet: MA4P7433-1141T datasheetMA4P7433-1141T Datasheet/PDF
Quantity: 1000
9000 +: $ 0.17010
Stock 1000Can Ship Immediately
$ 0.19
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 75V
Current - Max: 150mA
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.5 Ohm @ 10mA, 100MHz
Power Dissipation (Max): 200mW
Operating Temperature: 175°C (TJ)
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MA4P7433-1141T diode is one of RF diodes that is widely used in many electronics and communication applications. It is available similarly as MA4P0433-1141T, which are both PANASONIC brand miniature type diodes. It is made of GaAs technology and is characterized by its low noise and fast frequency response. It is a small package RF diode with a band of 100 MHz to 4 GHz.

MA4P7433-1141T application field includes many areas such as automatic gain control, switching, transmit and receive functions of wireless communication systems, radar systems, pulsed power supply and circuit protection. The MA4P7433-1141T is used for various applications due to its fast frequency response, low harmonic distortion and low noise figure. The RF diode is also ideal for microwave power amplifier design applications.

The working principle of the MA4P7433-1141T diode is based on the injection of charge carriers. A p-n junction diode is the most common type of the RF diode. This junction will be forward biased when voltage is applied and current will flow through it. By doing this, the minority carriers in the p-type and n-type material of the junction will combine and create electron-hole pairs, known as current flow. Reverse biasing of the junction will cause the current flow to stop.

When the junction is reverse biased, the depletion region (electron-hole pair space) will increase and the current flow will decrease. This decrease in current flow produces a change in the resistance of the junction. This is known as the Rectified Diode Effect. The MA4P7433-1141T diode is capable of producing a high level of rectification effect over a wide frequency range.

The MA4P7433-1141T diode also has excellent stability and linearity which makes it suitable for many applications. The diode is immune from modulation effects and does not require frequency tracking for operation. MA4P7433-1141T can operate up to +85 °C and has a wide operating voltage range from 4.5V to 20V.

The MA4P7433-1141T diode is versatile and highly useful in RF applications in many areas such as automatic gain control, switching and transmit and receive functions. Its fast frequency response, low harmonic distortion and low noise figure make it suitable for application in wireless communication systems, radar systems, pulsed power supplies and circuit protection.

The specific data is subject to PDF, and the above content is for reference

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