MA4P1250-1072T Discrete Semiconductor Products

The MA4P1250-1072T is an RF diode manufactured by SGA-MA4P1250-AMM that provides semi-conductor radiation control for radio frequency applications. This device can be used for radio frequency filtering, switching, low noise amplifiers, frequency conversion, and microwave power control. It features a reliable, low-noise operation, high efficiency, and low insertion loss.

The MA4P1250-1072T is a 12.5GHz transistor type with a maximum ratings of +150V, -150V, 10mW, and +30 dBm. This diode can operate in a frequency range of 0.5GHz-1GHz. The characteristic impedance of the device is 50 ohms and its storage temperature range is -55°C to +150°C.

The MA4P1250-1072T has two pins, pin 1 is the gate and pin 2 is the drain. The transistor is connected in a common-source configuration. The gate port is biased by a DC voltage source, and the drain port is driven by an RF signal. The RF signal is applied to the gate port, which produces a current flowing between the drain and the source that is proportional to the RF voltage applied. The transistor also has a high current gain, making it suitable for controlling high-frequency and high-power signals.

In addition to its use as a switching device, the MA4P1250-1072T can be used in frequency conversion, especially in down-converter applications. The diode is capable of providing low noise conversion of high frequency input signals, due to its high current gain. The device is also suitable for use in low-noise amplifiers (LNAs), as it has a high current gain and can provide excellent noise figure performance. Moreover, because of its low loss, it is ideal for use in high-power RF applications.

The MA4P1250-1072T has a wide range of applications. It can be used as a switching device in radio frequency applications, such as filters and antenna switches. It can also be used as an amplifier in broadband and high-power applications. Moreover, it can be used in frequency conversion, as it has high current gain and low noise performance. Furthermore, the diode is suitable for use in low-noise amplifiers and microwave power control applications.

In conclusion, the MA4P1250-1072T is a reliable, low-noise RF diode designed for radio frequency applications. It has two pins and is connected in a common-source configuration. The diode has a wide range of applications, and can be used in switching, low noise amplifiers, frequency conversion, and microwave power control. It has a high current gain and excellent noise figure performance, making it ideal for high-frequency and high-power applications.