MCH3474-TL-E

Vgs(th) (Max) @ Id:	--
Package / Case:	3-SMD, Flat Leads
Supplier Device Package:	SC-70FL/MCPH3
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	430pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	4.7nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	50 mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	4A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The MCH3474-TL-E is an enhancement mode N-channel vertical double-diffused Metal Oxide Semiconductor Field-Effect Transistor (VDMOSFET). This device is specifically designed for wide range of consumer applications such as motor control, lamp control, battery chargers, solar arrays and DC-DC converters. Operating from a wide supply range of 8V to 18V, its typical drain current (ID) of 8A makes it suitable for heavy applications that require high power dissipation. The device consists of two silicon–controlled rectifiers (SCR) that are connected in series between the drain and the source. The upper and the lower SCR are connected in opposition to each other, creating two separate N-type channels on either side of the surface. The two sides form the two main components of the device: the P-type region and the N-type region. The upper and the lower SCR are connected in series, with the uppermost SCR connected to the gate and the lowermost SCR connected to the source. As the voltage at the source increases, the lower SCR turns on, while the upper SCR remains off. This activation of the lower SCR allows a current to flow through the P-type region, and the upper SCR remains off until the voltage at the source further increases. This type of operation is referred to as the enhancement mode operation of the MCH3474-TL-E. The MCH3474-TL-E works on the principle of drain-source conduction. A positive voltage is applied to the gate of the device and this triggers the lower SCR to switch on. The current through the P-type region is increased and the current through the N-type region is reduced. This causes a voltage drop on the gates of the two SCRs and a voltage rise on the drain thereby creating an inversion layer which forms a channel of current from the source to drain. This state remains until the gate voltage is reduced below a certain threshold, at which point the current is interrupted and the device is switched off. The MCH3474-TL-E is ideal for applications that require high power dissipation and low on-resistance. It has an on-resistance of 2.6 Ω and a ‘current sharing’ feature that enables it to efficiently manage the current flow between the two SCRs. This device offers improved transient response compared to other VDMOSFETs and is suitable for use in lighting and motor control applications. In conclusion, the MCH3474-TL-E is an excellent choice for applications where high power dissipation and low on-resistance are required. This device is suitable for applications such as motor control, lamp control, battery chargers, solar arrays and DC-DC converters. With its wide range of features and its able to enhance performance of end systems, the MCH3474-TL-E is an attractive choice for cost-effective power solutions.

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