Allicdata Part #: | MJE13005GOS-ND |
Manufacturer Part#: |
MJE13005G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 4A TO220AB |
More Detail: | Bipolar (BJT) Transistor NPN 400V 4A 4MHz 2W Throu... |
DataSheet: | MJE13005G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SWITCHMODE™ |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 1A, 4A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 2A, 5V |
Power - Max: | 2W |
Frequency - Transition: | 4MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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The MJE13005G is a high current, low power, NPN, silicon Darlington transistor. The pinout is the same as the popular TO-220 package, making it ideal for applications requiring high current gain or for the switching of higher current loads. It is ideal for use in a variety of applications including home audio systems, communication equipment, industrial and automotive.
The MJE13005G is designed for operation with high frequency and high power, making them suitable for a wide range of applications from power switching and control circuits to motor and solenoid control. The maximum collector current rating is 30 amps at up to 75 volts. The maximum power dissipation is 625 watts. The typical turn-off and turn-on times are 15 ns and 20 ns respectively.
The primary application field of a MJE13005G is as a power transistor in power supplies and motor control applications. It is well suited for switching high current loads without significant voltage drops. It is also used in high frequency converters and amplifiers. It can handle high frequency signals up to 3GHz. The combination of its power handling capability and high frequency makes it an ideal choice for a variety of applications.
The MJE13005G is an NPN-type transistor. It has three terminals: the collector, base and emitter. The collector and base terminals are used to control the current flow from the collector to the emitter. The collector is connected to the positive supply voltage and the emitter is connected to the negative supply voltage. The base is used to control the current flow into the base-collector region. When a small amount of current is injected into the base, it causes the transistor to conduct across the collector-emitter region, thereby allowing current to flow from the collector to the emitter.
The MJE13005G can also be used in voltage regulators. The transistor can be used to control the output voltage of the regulator. When a voltage is applied to the base of the transistor, it reduces the resistance between the collector and the emitter, enabling current to flow from the collector to the emitter. By controlling the voltage applied to the base, the current flowing from the collector to the emitter can be regulated. This makes the MJE13005G ideal for use in regulated power supplies and voltage regulators.
In addition to its use as a power switching transistor, the MJE13005G can also be used as a Darlington pair transistors. In this mode, two transistors are integrated together and connected in series. This configuration increases the current gain of the entire circuit. Unlike typical transistors, the MJE13005G has the added advantage of low power dissipation, making it suitable for low power usage.
The MJE13005G is a versatile and reliable transistor that can be used in a variety of applications. Its high current handling capability, low power dissipation, high frequency capability and low collector-emitter saturation voltage are among the many features that set it apart from other transistors. The MJE13005G is an ideal choice for many consumer and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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