| Allicdata Part #: | MJE18004GOS-ND |
| Manufacturer Part#: |
MJE18004G |
| Price: | $ 0.62 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 450V 5A TO220AB |
| More Detail: | Bipolar (BJT) Transistor NPN 450V 5A 13MHz 75W Thr... |
| DataSheet: | MJE18004G Datasheet/PDF |
| Quantity: | 340 |
| 1 +: | $ 0.62000 |
| 10 +: | $ 0.60140 |
| 100 +: | $ 0.58900 |
| 1000 +: | $ 0.57660 |
| 10000 +: | $ 0.55800 |
| Series: | SWITCHMODE™ |
| Packaging: | Tube |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 5A |
| Voltage - Collector Emitter Breakdown (Max): | 450V |
| Vce Saturation (Max) @ Ib, Ic: | 750mV @ 500mA, 2.5A |
| Current - Collector Cutoff (Max): | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 14 @ 300mA, 5V |
| Power - Max: | 75W |
| Frequency - Transition: | 13MHz |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Base Part Number: | MJE18004 |
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The MJE18004G transistor is a NPN type bipolar junction transistor (BJT), designed for use in audio amplifier and switching applications. It is a high-power device with a rated collector-emitter voltage of 30V and a rated collector current of 35A. It has a standard transistor configuration, with an emitter, base and collector, as well as a dielectric withstand voltage rating of at least 200V.
The MJE18004G transistor is ideal for applications where high power, low noise, and exceptional reliability are important. It is capable of driving inductive and capacitive loads, as well as providing current gain at low frequencies. It is also capable of switching, as it has a fast response time and a short off-state delay time.
The working principle of the MJE18004G is based on the concept of the PN junction. When a voltage is applied across the PN junction, electrons from the n-type material will migrate to the p-type material and holes from the p-type material will migrate to the n-type material. This creates a charge imbalance, which results in a potential barrier between the two regions. When the voltage is increased, the potential barrier gets higher, resulting in a greater current flow.
The MJE18004G transistor is typically used in audio amplifiers and switching applications. In an audio amplifier, it can be used to boost the signal level before it is sent to the speaker. In a switching application, it can be used to control the speed of a fan or pump, or to turn a light on or off. It can also be used in HVAC systems to control the temperature or fan speed.
The MJE18004G has several advantages over other types of transistors. It is extremely robust and can handle high power levels without suffering damage. It is also fast, with a short off-state delay time, which is important for high-speed switching applications. Additionally, it is relatively inexpensive and easy to find, as it is widely used in a variety of applications.
In conclusion, the MJE18004G is an excellent choice for high-power, low-noise applications. It has a fast response time and a short off-state delay time, making it ideal for switching applications. Additionally, it is robust and can handle high power levels, making it suitable for use in audio amplifiers and HVAC systems. It is also relatively inexpensive and easy to find, making it a popular choice in a variety of industries.
The specific data is subject to PDF, and the above content is for reference
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MJE18004G Datasheet/PDF