MJE170STU Allicdata Electronics
Allicdata Part #:

MJE170STU-ND

Manufacturer Part#:

MJE170STU

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 3A TO-126
More Detail: Bipolar (BJT) Transistor PNP 40V 3A 50MHz 1.5W Thr...
DataSheet: MJE170STU datasheetMJE170STU Datasheet/PDF
Quantity: 1183
1 +: $ 0.28980
10 +: $ 0.24822
100 +: $ 0.18522
500 +: $ 0.14553
1000 +: $ 0.11246
Stock 1183Can Ship Immediately
$ 0.32
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Power - Max: 1.5W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Base Part Number: MJE170
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MJE170STU is a high-voltage, high-speed switching transistor, commonly used in power-supply circuits and motor drivers. It consists of two different sections: a field effect transistor (FET) and a bipolar junction transistor (BJT). The FET is used to provide fast switching capabilities, and the BJT is used to control the current flow.

The FET part of the MJE170STU consists of a source, a gate, and a drain. The source is connected to the gate, and the gate is connected to the drain. The gate controls the current flow and is activated by an external signal. The drain is connected to a power supply, allowing the transistor to switch on and off quickly. The FET section is able to switch up to 200 volts DC, making it ideal for motor drivers and high-power applications.

The BJT section of the MJE170STU contains two transistors: an n-type and a p-type. The n-type transistor is used as a switch, and the p-type transistor is used to control the current flow. The n-type transistor is connected to the drain, and the p-type transistor is connected to the source. When the n-type transistor is switched on, it allows current to flow from the source to the drain. This current is then regulated by the p-type transistor.

The working principle of the MJE170STU is based on the FET and BJT sections working together. When the external signal is applied to the gate, it switches on the FET and allows current to flow from the source to the drain. The current is then regulated by the BJT section, allowing the transistor to operate in a more efficient manner.

The MJE170STU can be used in a variety of applications, such as motor drivers and high-power power supplies. It is also suitable for digital circuits, as it can switch quickly and accurately. This makes it an ideal choice for applications that require high-speed switching capabilities.

In summary, the MJE170STU is a high-voltage, high-speed switching transistor. It consists of a FET and a BJT section, which work together to provide fast and accurate switching. This makes it an ideal choice for motor drivers and high-power power supplies, as well as for digital circuits.

The specific data is subject to PDF, and the above content is for reference

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