MJE170

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MJE170 is a single-pole, medium-power, NPN bipolar junction transistor (BJT) commonly used in applications requiring both high current and medium/high voltage gain. It comes in a TO-220F package and is manufactured using a vertical integration process, which ensures low parasitics, high switching speeds and low noise values. The MJE170 can be used in a wide variety of high-frequency and high-voltage applications.

The MJE170 is a small-signal BJT designed to handle large signal loads and large supply voltages. It features a high frequency performance and high gain. With a 2V-250mA-60W power rating, it can handle up to 30V and deliver a maximum output of 2V/60W. The maximum collector-emitter voltage (Vce) rating of the transistor is 30V and the maximum collector-base voltage (Vcb) rating is 90V. This allows the device to be used in applications that require a higher voltage swing compared to standard BJTs.

The MJE170’s working principle is based on the principle of negative resistance. When a small current flows through the base-emitter junction (Vbe) of the transistor, the base-emitter voltage increases. This causes the base-collector voltage (Vbc) to increase, resulting in further current flow through the transistor. As the current through the transistor increases, its resistance decreases, creating a negative resistance loop. This causes the transistor to switch on or off, depending on the input voltage and the current.

The MJE170 is a popular choice for use in a variety of high-frequency applications, including switching power supplies and audio amplifiers. It also has its use in applications that require high voltage gain and fast switching performance, such as motor control and power factor correction. For applications that require a high voltage gain and fast switching, the MJE170 is an excellent choice. With its high performance and reliable operation, it can be used in both commercial and industrial applications.

The MJE170 is easy to use and has a simple construction. It is constructed of four pins: collector, emitter, base and substrate. The collector and emitter are connected through a PN junction. The base is connected to the emitter and is used to control the current flow of the transistor. The substrate is an insulation layer that separates the base and emitter. For operation, the base-emitter voltage (Vbe) must be kept below the collector-emitter voltage (Vce) to ensure proper operation.

In summary, the MJE170 is a high-performance single-pole, NPN bipolar junction transistor (BJT) available in a TO-220F package. It provides high frequency performance, low noise values, and high gain. It is used in applications requiring high current and medium to high voltage gain, including switching power supplies, audio amplifiers, motor control, and power factor correction. It is easy to use and has a simple construction.

The specific data is subject to PDF, and the above content is for reference