Allicdata Part #: | MJE15035OS-ND |
Manufacturer Part#: |
MJE15035 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 350V 4A TO220AB |
More Detail: | Bipolar (BJT) Transistor PNP 350V 4A 30MHz 2W Thro... |
DataSheet: | MJE15035 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 350V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 2A, 5V |
Power - Max: | 2W |
Frequency - Transition: | 30MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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The MJE15035 is a NPN Bipolar Junction Transistor (BJT) that is designed for use in high-current, low-frequency power amplification and switching applications – as well as low-noise audio instrumentation. This device has a high gain, low noise and low base resistor, making it suitable for mid to high power audio amplifiers or switching circuits. It has excellent thermal resistance, robustness, and input/output characteristics, making it suitable for a wide variety of applications.
The MJE15035 is commonly used in audio amplifiers and switching circuits. It is also a suitable device for analog current and voltage amplification, radio frequency (RF) amplifiers, switching power supplies, OFDM (Orthogonal Frequency Division Multiplexing) communication systems, short-range sensors, and low voltage power supplies. It is also used in audio amplifiers, power MOSFET gate drive circuits, and as a replacement for discrete transistors used in audio amplifiers.
Structure and Working Principle
The MJE15035 is a NPN BJT transistor composed of three layers: emitter, base and collector. Its emitter is generally made up of one or two spaced curved pieces of a high-level semiconductor material. The base is made up of a thin layer of the same material that has been carefully applied between the two collector layers. A base resistor is used to control the current from the emitter to the base, typically around 0.6-1A. The collector is made up of either a single or double layer of electrodes, depending on the type of transistor.
A bipolar junction transistor amplifies small changes in one of its electric signals by producing a larger change in its output signal. This is achieved by controlling the base current through its base resistor. A small change in the electric signal is amplified by the transistor, resulting in a much larger change in the output signal. This process is known as current amplification.
Features and Benefits
The MJE15035 transistor has a high gain, low noise, and low base resistor which make it suitable for use in a variety of applications. It has excellent thermal resistance, robustness, and input/output characteristics suitable for audio amplifiers, power MOSFET gate drive circuits, and signal amplification circuits. This device is also available in various package styles, including through hole or surface mount. The device is also RoHS compliant, making it safe for use in hazardous environments.
The MJE15035 offers a wide array of features and benefits, providing users with an ideal solution for a variety of amplifier and switching applications. It is perfect for audio amplifiers, short-range sensors, and low voltage power supplies that require low-noise and high gain. Additionally, the MJE15035 is known for its robustness, making it a suitable option for challenging electronic environments.
The specific data is subject to PDF, and the above content is for reference
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