MJE18004D2G Allicdata Electronics
Allicdata Part #:

MJE18004D2G-ND

Manufacturer Part#:

MJE18004D2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 450V 5A TO-220AB
More Detail: Bipolar (BJT) Transistor NPN 450V 5A 13MHz 75W Thr...
DataSheet: MJE18004D2G datasheetMJE18004D2G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Power - Max: 75W
Frequency - Transition: 13MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: MJE18004
Description

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The MJE18004D2G is a silicon NPN epitaxial planar Darlington transistor which is commonly used in power switching applications. It has an overall power rating of 200 Watts and can handle up to 400 Volts. It has a current gain of 1000, with a maximum collector-emitter voltage of 45 Volts. The MJE18004D2G has a very low saturation voltage rating of 1.2 Volts and a high breakdown voltage rating of 300 Volts.

The MJE18004D2G is a wide range of power application, because it is commonly used in power switching applications, such as motor control, solenoid control, motor starters, relays and power transistors. It is also useful in high-voltage and high-frequency applications, such as motor controls, high-input impedance amplifiers, high-current switching, and power supplies. The MJE18004D2G is also suited to applications where regulation of current or voltage is required, such as switched-mode power supplies, electronic ballasts and power regulators.

The MJE18004D2G uses three main components, namely, the base, the emitter, and the collector. The emitted electrons from the base to the collector is controlled by the applied base voltage. When the base voltage is zero, no electrons will be emitted and the current will be zero. As the base voltage increases, the current will increase, and the collector current will be equal to the emitter current, or the collector current divided by the current gain.

In addition to power switching applications, the MJE18004D2G is also useful for high-frequency circuit applications such as oscillator circuits, logic circuits, and amplifier stages. It has a low gain-bandwidth product and is very stable with a wide range of operating temperatures. It is also very rugged and can handle high current and power dissipation levels.

The MJE18004D2G is a versatile, dependable, and dependable power transistor. It is easy to use, and its wide range of applications make it a popular choice for a variety of power applications. The MJE18004D2G is a reliable and cost-effective way to power your projects efficiently.

The specific data is subject to PDF, and the above content is for reference

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