Allicdata Part #: | MJE171OS-ND |
Manufacturer Part#: |
MJE171 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 3A TO225AA |
More Detail: | Bipolar (BJT) Transistor PNP 60V 3A 50MHz 12.5W Th... |
DataSheet: | MJE171 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1.7V @ 600mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 1V |
Power - Max: | 12.5W |
Frequency - Transition: | 50MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-225AA |
Base Part Number: | MJE171 |
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The MJE171 is a NPN-base two-hundred-and-sixty-five volt power transistor that is suitable for commercial and industrial applications. This transistor has exceptional properties compared to ordinary transistors. It is capable of sustained high-temperature operation, such as up to 260 volts. Additionally, it offers higher power dissipation capabilities due to its higher gain-bandwidth ratio along with low collector-emitter saturation voltage.
The transistor’s superior gain structure makes it ideally suited for a variety of applications needing high-current switching and to serve as a driver for high-current output stages. It is designed for use mainly in the consumer electronics industry, existing in the form of an amplifier and switch in consumer products such as CD and DVD players, television receivers, and loudspeakers.
The MJE171 transistor’s maximum collector current rating is 800mA and its maximum power dissipation is 200W. It is constructed in a single-collector configuration, with dual emitter-base contacts. It consists of four terminalsNPN, B (base), C (collector) and E (emitter). The transistor is typically used in bipolar junction transistor (BJT) applications, in which a device’s base current is amplified and sent to the collector. The current flows from the collector to the emitter.
The MJE171 has a built-in thermal protection system which automatically reduces the current transfer ratio in case of an over-temperature event. This technology provides the user with additional protection against the risks posed by overheating. It also features low forward voltage drop and low saturation voltage.
The working principle of theMJE171 transistoris that it uses current amplification to transfer a current control signal from its base to its collector. This is done by the transistor amplifying the small base current, which then causes the larger collector current. This process is also known as current amplification, which is which is the process of increasing the current passing through the collector from the small base current.
TheMJE171 is the most suitable for applications requiring high voltage and high current such as motor control and switching power supplies. It is also ideal for audio amplifiers and applications involving high-current output stages. In addition, it can be used as an amplifier and switch in several types of consumer products.
It is important to note that the MJE171 has a higher saturation voltage than traditional transistors, as it is designed with a higher gain-bandwidth ratio. This allows it to handle more current and dissipate more heat, while offering higher gains over traditional transistors. Therefore, this transistor is highly suitable for applications requiring power and high-current transfer.
In conclusion, the MJE171 transistor is an ideal choice for many applications requiring high-power output and sustained high-temperature operation. It is well-suited for use as an amplifier and switch in consumer electronic devices, as well as for motor control and switching power supplies. Additionally, its unique characteristics allow it to perform better than traditional transistors, with a higher current transfer ratio, lower forward voltage drop, and lower saturation voltage.
The specific data is subject to PDF, and the above content is for reference
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