Allicdata Part #: | MJE180GOS-ND |
Manufacturer Part#: |
MJE180G |
Price: | $ 0.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 3A TO225AA |
More Detail: | Bipolar (BJT) Transistor NPN 40V 3A 50MHz 1.5W Thr... |
DataSheet: | MJE180G Datasheet/PDF |
Quantity: | 351 |
1 +: | $ 0.34020 |
10 +: | $ 0.29358 |
100 +: | $ 0.21911 |
500 +: | $ 0.17217 |
1000 +: | $ 0.13304 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.7V @ 600mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 1V |
Power - Max: | 1.5W |
Frequency - Transition: | 50MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-225AA |
Base Part Number: | MJE180 |
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The MJE180G is a high voltage and high current NPN power transistor manufactured by ON Semiconductor. This transistor is designed for use in a variety of applications such as power amplifiers and audio amplifiers, as well as various other types of switching devices. This device has several features that make it ideal for use in these types of applications, such as its rugged construction, high voltage rating, and high current capacity. It also features a wide range operating temperature range.
The main application field for the MJE180G is in applications where a high-current current handling capability is necessary. This is due to its high power rating, which is able to handle up to 100W of power. Additionally, this transistor is well-suited for use in applications that require a high voltage rating, as it is able to maintain a voltage rating of up to 500V. Furthermore, this device is also suitable for use in applications that require a wide temperature range, as it can operate at temperatures ranging from -55°C to 150°C.
The working principle of the MJE180G is centered around the concept of a bipolar NPN transistor. This type of transistor is unique in that its current gain is dependent on the amount of current being applied to the Base of the transistor. Specifically, if a large current is applied to the Base, then the transistor will amplify the current and will be able to switch a large amount of current. However, if a small current is applied to the Base, then the current gain will be reduced and the transistor will be able to switch a smaller amount of current.
Additionally, the MJE180G also has a base-emitter voltage of 5V, which means that the transistors will be able to work reliably at lower currents. This is particularly beneficial in applications that require a low power supply voltage as it will allow to run the device at a low voltage. Furthermore, the wide operating temperature range also makes this transistor ideal for use in applications that require operation in extreme temperature environments.
Overall, the MJE180G is an ideal choice for applications that require a high current, high voltage, and wide operating temperature range. It is particularly well suited for use in power amplifiers and audio amplifiers, as well as various other types of switching devices. Thus, it is an ideal choice for a variety of applications due to its robust construction, high power rating, and wide range of operating temperatures.
The specific data is subject to PDF, and the above content is for reference
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