MJE180 Discrete Semiconductor Products

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The MJE180 is a high-powered Bipolar Junction Transistor (BJT) designed for applications of power switching, amplification, and antenna protection. The device offers high breakdown voltages, high DC current gain, and a low saturation voltage, allowing for enhanced performance in power applications. This article will discuss the application fields and working principles of the MJE180.

Applications

The MJE180 is designed for use in a variety of applications, such as:

• High power switching applications
• Small signal amplification
• Efficient power amplifiers
• High current analog circuits
• High voltage protection circuits
• Audio amplifiers and drivers
• Circuits requiring high current and static current control

Working Principle

The MJE180 is a high-powered BJT designed to process large currents and voltages. It is designed to work as a current T-junction between three types of layers: base, collector and emitter. By applying the principle of current flow, current can be controlled by narrowing or widening the path which leads to the collector or emitter. The base therefore controls the current flow and voltage within the structure of this transistor.

The MJE180 works as a three-terminal device, meaning that when a voltage is applied across the base and collector, a current flows between the base and the collector. This current is known as the "base current" and is determined by the voltage applied. By varying the voltage (and thus the base current), the Collector-Emitter current is then controlled.

The MJE180 is also known as a depletion-mode transistor. As the base current increases, the collector-emitter current increases as well, meaning that the transistor works in a "linear" manner. This mode of operation means that the MJE180 will act as a linear amplifier if subjected to a base input voltage that is larger than the collector-emitter voltage.

The MJE180 is designed to work with a wide range of voltage supply, from 6V up to 80V and can be used in circuits that require both high-voltage and high-current handling. It also offers excellent thermal stability, making it suitable for applications in high-temperature environments.

Conclusion

The MJE180 offers a variety of applications for a range of power devices. Its high breakdown voltages, high DC current gain, and low saturation voltage make it an ideal choice for many applications requiring amplification, high-voltage protection, as well as small signal amplification. Understanding the working principle of this transistor and its various application fields is important when considering the MJE180 for use in any circuit.

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