Allicdata Part #: | MJE181GOS-ND |
Manufacturer Part#: |
MJE181G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 60V 3A TO225AA |
More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 50MHz 1.5W Thr... |
DataSheet: | MJE181G Datasheet/PDF |
Quantity: | 1442 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1.7V @ 600mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 1V |
Power - Max: | 1.5W |
Frequency - Transition: | 50MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-225AA |
Base Part Number: | MJE181 |
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Transistors have become essential components of electrical and electronic circuits. They are increasingly used throughout the digital world. The MJE181G application field and working principle makes it one of the most important types of transistors.
MJE181G belongs to the bipolar junction transistors (BJT) family, specifically to the single type. It consists of three parts, a base, a collector and an emitter. It can also be used as switches, and can amplify both AC and DC current, because of its ability to regulate and change current from a low to a high.
When it comes to the application field of the MJE181G transistors, it is mainly used for general purpose switching and amplifying, high current switching in AC and DC circuits, and low current limiting in high voltage applications.
Regarding the working principle, first, when voltage is applied to the base, the controlled current from the base to the collector increases, thus opening up the current between the collector and the emitter. This results in an increase in the total amount of current that goes through the circuit, because of the increased current flow between the collector and the emitter.
The current that flows through the emitter terminal is then regulated depending on the value of the base current and the size of the transistor. This means that the current flow can be reduced or increased by adjusting the value of the base current.
When the base current is reduced, the current that flows between the collector and the emitter is reduced, thus the total amount of current in the circuit is also reduced. This allows the transistor to act as a switch, and it can be used for switching purposes.
In addition, if the base current is increased, the amount of current from collector to the emitter will be increased, and the total amount of current in the circuit will be increased. This means that the transistor gives an amplification of the current from the base to the collector, which is useful for signal amplification. In other words, the transistor can be used for signal amplification.
Finally, the last important aspect of the MJE181G transistor is its high-current switching capability, which allows it to switch large amounts of current that it was not designed to handle. This makes it suitable for applications where high-current is required, such as power supplies and switching power converters.
In conclusion, the MJE181G is an important type of single bipolar junction transistor (BJT). Its application field is mainly used for general purpose switching and amplifying, high current switching in AC and DC circuits, and low current limiting in high voltage applications. Its working principle allows for a current to be regulated depending on the value of the base current and the size of the transistor. As such, it can act as a switch, and can also be used for signal amplification and high-current switching.
The specific data is subject to PDF, and the above content is for reference
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