MJE15032G Allicdata Electronics
Allicdata Part #:

MJE15032GOS-ND

Manufacturer Part#:

MJE15032G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 250V 8A TO220AB
More Detail: Bipolar (BJT) Transistor NPN 250V 8A 30MHz 2W Thro...
DataSheet: MJE15032G datasheetMJE15032G Datasheet/PDF
Quantity: 1431
Stock 1431Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Power - Max: 2W
Frequency - Transition: 30MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Description

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Transistors - Bipolar (BJT) - Single, such as the MJE15032G, are commonly used for switching, amplification and interface circuits, as well as for RF applications such as amplifiers, modulators and detectors. The MJE15032G is designed to operate on 12V voltages and it is capable of carrying up to 2A of collect current. It is a standard 3-pin NPN device, with a maximum power dissipation of 2.1W, which makes it perfect for high power applications.

The working principle of the MJE15032G is that when a small current is supplied to the base of the transistor, it controls (or modulates) the amount of current that is allowed through its collector and emitter. The base current is usually a small proportion of the total current that flows through the collector and emitter circuits, but it is enough to cause the transistor to switch from a “on” to a “off” state. When the transistor is in the “off” state, no current flows through the collector and emitter circuits, and the device is effectively acting as an open switch.

In order for a transistor to function properly, it needs to be supplied with the correct voltages at the collector, base and emitter. The base voltage VBE is reversed biased (VBE = 0.7V), while the collector voltage VCE is forward biased (VCE/16). In addition, the collector-to-emitter voltage VCES must be smaller than the maximum VCEO rating. Different BJT transistor designs can have different specs and characteristics, and the parameters of each individual device should be accurately checked before being used in a circuit.

The MJE15032G is a popular choice for general switching and amplification tasks, as it combines high performance, low cost and excellent reliability. When properly designed into a circuit, this device can provide optimal switching performances - correct biasing, fast switching time and low noise levels. In addition, the MJE15032G is a robust and relatively simple device, and it can be used in many applications, ranging from low-power motors, solenoids and relays to high-frequency RF amplifiers.

In conclusion, the MJE15032G is a versatile transistor design which can be used to achieve excellent switching and amplification performance with very low power consumption. It is suitable for a wide variety of applications and it is highly reliable and cost-effective, making it an ideal choice for many designs. It is important to correctly bias the device and to correctly calculate the collector-to-emitter voltage, in order to ensure optimal performance and to prevent any performance issues due to incorrect biasing.

The specific data is subject to PDF, and the above content is for reference

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