MJE18008

Series:	SWITCHMODE™
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	8A
Voltage - Collector Emitter Breakdown (Max):	450V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 900mA, 4.5V
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	14 @ 1A, 5V
Power - Max:	125W
Frequency - Transition:	13MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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Introduction

The MJE18008 is a single-chip NPN Silicon Junction Transistor (SJT) designed for use in general-purpose applications. It is a high power device that is capable of operating at currents up to a maximum of 28 amperes. The transistor is available in a number of different package types, including the TO-259, TO-220, and TO-247 variants. Its high current capability makes it an ideal choice for high power applications such as power amplifier circuits, motor control, and other similar applications.

Application Field

The MJE18008 is suitable for a wide range of general-purpose applications, including power amplifier circuits and motor control. In power amplifier applications, the transistor can be used to control large power currents with a minimum of effort. It can also be used in audio amplifier designs, as well as certain switching applications where high power is required. The MJE18008 is also suitable for use in lighting applications and can be used for controlling high power lightbulbs.In automotive applications, the MJE18008 can be used for controlling automotive electric motors, providing effective power control for electric vehicles. The designed collector-emitter voltage is high enough to fire electric starter motors and other high power automotive requirements.The MJE18008 is also used in consumer electronics products, such as computer motherboards, TVs, and DVD players.

Working Principle

The MJE18008 is a NPN Silicon Junction Transistor (SJT). It is a three-pin device, with a base, a collector, and an emitter. The base terminal provides the link between the two other terminals and provides control. The collector terminal is used to switch the current flow and the emitter terminal is used to provide the return path. When a small current is applied to the base terminal, it creates a larger current amplified through the emitter-base junction, allowing the device to control a larger current through the collector terminal. This principle is called transistor action and is responsible for the functioning of the MJE18008.

Conclusion

The MJE18008 is a single-chip NPN Silicon Junction Transistor (SJT). It is an ideal choice for applications requiring high operating current and is suitable for use in a wide range of applications, including power amplifier circuits, motor control, consumer electronics and automotive applications. The device employs the principle of transistor action and is capable of providing efficient and cost-effective control of power currents.

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