MJE15034G

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	350V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 1A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 2A, 5V
Power - Max:	2W
Frequency - Transition:	30MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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MJJ15034G is a type of bipolar single-transistor whose base, emitter, and collector are all composed of a single piece of semiconductor material. It is a more contemporary take on the traditional bipolar junction transitor (BJT).MJJ15034G transistors have the ability to function in two distinct regions: the forward active region, and the reverse saturation region. In the forward active region, the transistor acts as an amplifier and operates in the linear region. When operating in the reverse saturation region, the transistor acts as a switch and can be used for signal gating or to provide higher current gain.MJJ15034G transistors are part of the family of NPN and PNP Bipolar Junction Transistors (BJT) . They are used in a variety of applications, including amplifiers, digital circuits, and switching power supplies. In addition, MJJ15034G transistors are also considered an industrial-grade version and are suitable for commercial applications with high switching speeds. They have an ability to withstand a wide range of working temperatures, making them ideal for control applications in harsh environments.MJJ15034G transistors are composed of an N-type emitter, a P-type base, and an N-type collector. To understand the operation of the MJJ15034G, one must understand the operation of BJTs. In short, as current is applied to the P-type base and N-type emitter, a pool of positive charge accumulates at the base-emitter junction. This causes the base voltage to drop and creates an electric field between the base and the collector. As this field increases, it draws charge carriers from the N-type collector to the P-type base and forces any electrons that were present at the base-collector junction to be pushed back across the junction. This in turn forms a negative voltage at the collector.In terms of application fields, transistors of this type are used in various digital applications, such as logic gates and amplifiers. They are also used to switch large currents in applications such as motor controls or power supplies. Furthermore, MJJ15034G transistors are also very suitable in RF applications, as they can be used to create low-noise amplifiers, pre-amplifiers, and mixers.MJJ15034G transistors are beneficial to a wide range of applications due to their linear current and voltage characteristics and fast switching speeds. They are capable of low level amplification and have excellent temperature stability and low power dissipation ratings. Additionally, they have a low noise rating and have an extended temperature range. The main advantages of the MJJ15034G are its versatility and high performance, which allow it to fulfill a wide range of applications. It is well-suited for low-noise, high-precision amplifier circuits, or for use in motor controls and switch power supplies. Additionally, the transistor is able to function in two distinct regions: in the forward active region, where it serves as an amplifier; and in the reverse saturation region, where it serves as a switch.

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