MJE13007

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The MJE13007 is a high voltage and high current NPN silicon power transistor. It is designed for general purpose power amplifiers and switching applications as represented by its PN symbol. It features excellent hFE linearity, high gain, fast switching times and better protection from transients and electrostatic discharges. The MJE13007 is also preconditioned for optimum avalanche characteristics and is ideal for use in high voltage switching and voltage regulator applications.

MJE13007 can handle a current of 1A and a voltage of 800V. It has a low saturation voltage (VCEsat) of 1.15V. The device is available in three package types, TO-66, TO-252 or TO-220F. The TO-66 and TO-252 packages can be installed on heatsinks for superior thermal performance and improved reliability. The TO-220F package provides easy handling and installation.

The MJE13007 uses a special technology called Emitter Ballast Resistor (EBR). This technology works by adding a resistor between the base and emitter of the transistor, to help reduce the amount of electricity going to the transistor directly. This allows the transistor to work at higher currents and voltages for longer periods of time, resulting in better reliability and longevity.

The device works using the same principle as other transistors. An input signal applied to the base of the BJT changes the number of electrons entering and leaving the base. As the current of electrons increases, it causes a voltage drop across the collector and emitter as more electrons pass through. This change in voltage creates a base current which then drives the collector current. The emitter current is proportional to the collector current, resulting in amplification of the signal.

The device is also protected against electrostatic discharge (ESD), allowing it to be used in high-voltage and high-current applications safely. Its construction also makes it ideal for use in switching and switching regulators. The device is easily integrated into circuits due to its three-pin configuration.

Overall, the MJE13007 offers improved protection from transients and electrostatic discharge, fast switching times, low saturation voltage and good thermal performance. It is a versatile and power silicon transistor for a wide range of applications. It is ideally suited for general purpose amplifier and switching applications.

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