MJE170G

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The MJE170G transistor is a type of single bipolar junction transistor (BJT). It is most commonly used in a wide array of applications, particularly those that require a relatively high input resistance, low noise figure, low offset voltage and errors in current matching. It is also suitable for high current gain-bandwidth product and low distortion applications, including Class AB power control, high frequency amplifiers and integrated audio amplifiers.

The BJT is a semiconductor device consisting of three terminals, emitter, base, and collector. It works through controlling the flow of charge carriers (electrons and holes). The precise working of a BJT is determined by its junction field-effect, which controls how current flows between the emitter and the collector. This junction field-effect is modulated by the current flowing through the base.

The MJE170G transistor has a high withstand voltage of 160V. It also has a low emitter-to-collector voltage of 0.7V, which is suitable for most small-signal switching applications. Whatsmore, it has a current gain-bandwidth product of 5 V/mV and a maximum collector-base voltage of 65 V. This feature makes it suitable for applications ranging from high-speed analog applications to low frequency application.

The MJE170G transistor also has a low collector-emitter saturation voltage of 0.2V, which makes it ideal for low voltage switching applications. Moreover, the device has a low power dissipation of 1.2W and it can dissipate up to 2.5W when the device is operating at a high power. This makes the MJE170G an ideal choice for applications such as power transistors, low noise amplifiers and high-voltage switching.

In addition, the MJE170G has an improved breakdown voltage of 160V compared to earlier versions of the device. It also has an improved gain-bandwidth product of 60V/mV, which is suitable for Class AB power control. With an extremely large current gain of 300, the device is ideal for both class A and B amplifiers. The device also has an intrinsic frequency roll-off of 10 times lower than the frequency of the resistor, making it suitable for a wide range of frequency applications.

The MJE170G transistor has a typical beta value of 300, which is ideal for high fidelity audio/video signals. Furthermore, the device has a very low capacitance of 7 pF, making it a suitable choice for high frequency applications. Finally, the device can withstand a voltage and temperature of +125 C, making it an ideal choice for high temperature applications.

In summary, the MJE170G is an incredibly versatile device that has a wide range of applications. Its high voltage and power ratings, low power dissipation and high current gain make it suitable for a wide range of applications such as high-end audio and video applications, Class A and B amplifiers, and high voltage switching. Furthermore, its low capacitance, low emitter-to-collector voltage and improved beta value make the device an ideal choice for high fidelity and high frequency applications.

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