| Allicdata Part #: | MJE181OS-ND |
| Manufacturer Part#: |
MJE181 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 60V 3A TO225AA |
| More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 50MHz 12.5W Th... |
| DataSheet: |  MJE181 Datasheet/PDF |
| Quantity: | 687 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 3A |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 1.7V @ 600mA, 3A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 1V |
| Power - Max: | 12.5W |
| Frequency - Transition: | 50MHz |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-225AA, TO-126-3 |
| Supplier Device Package: | TO-225AA |
| Base Part Number: | MJE181 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
General Overview:
The MJE181 is a type of NPN transistor that uses a silicon-based material as its active base layer. It consists of a base, a collector, and an emitter, which can be seen in the figure below. It has a very low saturation voltage, which makes it suitable for amplifying high input signals. It also has a excellent current gain, making it ideal for applications that require higher current amplification.
Figure 1: Schematic diagram of the MJE181
Working Principle:
The transistor is made up of three layers: the base, collector, and emitter. When current is applied to the base of the transistor, a small amount of current is amplifed, which is then passed on to the collector and emitter. This is known as conventional current flow. It is important to note that the direction of current flow is always from the emitter to the collector.
Conventional current flows through the transistor when the base-emitter voltage (VBE) is greater than the base current (IB). If the base current is increased, more current will flow through the transistor, and if the base-emitter voltage is reduced, the current will decrease. This is the basis of the transistor’s working principle.
The transistor operates in two different regions; the active region and the saturation region. In the active region, the transistor is technically in forward bias, where the base-emitter voltage is greater than the base current. In the saturation region, the transistor is technically in reverse bias, where the base-emitter voltage is lower than the base current.
When an increasing voltage is applied to the base of the transistor, it will start to act as an amplifier, increasing the amount of current going from the emitter to the collector. The output current from the transistor can be increased by increasing the base voltage, or by lowering the base current. The gain of the transistor increases as the base current is increased, and as the base voltage is decreased. As the base current increases, more carriers are injected in to the base region of the transistor, and the current gains increase.
Application:
The MJE181 is used in a variety of automotive applications, such as car radios, engine control, and motor control. It has a very low saturation voltage, which makes it suitable for amplifying high input signals. It also has an excellent current gain, making it ideal for applications that require higher current amplification. It is also used in other industrial and consumer applications, such as audio amplifiers, DC power supplies, linear voltage regulators, switching mode power supplies, and fluorescent lamp ballasts.
The MJE181 is ideal for applications that require high current amplification, such as motor control, industrial motor control and automotive motor controller systems. It is also suitable for applications that require low saturation voltage, such as audio amplifiers, switching mode power supplies, and DC power supplies. The MJE181 is capable of handling currents of up to 5A, making it suitable for many types of industrial applications.
Conclusion:
The MJE181 is a type of single bipolar junction transistor (BJT) that is used for a variety of automotive and industrial applications, such as car radios, engine control, and motor control. It has a low saturation voltage, which makes it suitable for amplifying high input signals. Its excellent current gain makes it ideal for applications that require higher current amplification. The MJE181 is also capable of handling currents of up to 5A, making it suitable for many types of industrial applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MJE172 | STMicroelect... | -- | 1000 | TRANS PNP 80V 3A SOT-32Bi... |
| MJE182 | STMicroelect... | 0.0 $ | 1000 | TRANS NPN 80V 3A SOT-32Bi... |
| MJE181 | ON Semicondu... | 0.0 $ | 687 | TRANS NPN 60V 3A TO225AAB... |
| MJE13003 | ON Semicondu... | -- | 1000 | TRANS NPN 400V 1.5A TO225... |
| MJE170 | ON Semicondu... | -- | 1000 | TRANS PNP 40V 3A TO225AAB... |
| MJE171 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 60V 3A TO225AAB... |
| MJE15030 | ON Semicondu... | -- | 1000 | TRANS NPN 150V 8A TO220AB... |
| MJE18008 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 450V 8A TO220AB... |
| MJE18004 | ON Semicondu... | -- | 1000 | TRANS NPN 450V 5A TO220AB... |
| MJE15033 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 250V 8A TO220AB... |
| MJE15032 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 250V 8A TO220AB... |
| MJE15031 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 150V 8A TO220AB... |
| MJE15029 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 120V 8A TO220AB... |
| MJE15028 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 120V 8A TO220AB... |
| MJE13009 | ON Semicondu... | -- | 1000 | TRANS NPN 400V 12A TO220A... |
| MJE13007 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 400V 8A TO220AB... |
| MJE18002 | ON Semicondu... | -- | 1000 | TRANS NPN 450V 2A TO220AB... |
| MJE15034 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 350V 4A TO220AB... |
| MJE15035 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 350V 4A TO220AB... |
| MJE182STU | ON Semicondu... | 0.34 $ | 3830 | TRANS NPN 80V 3A TO-126Bi... |
| MJE15034G | ON Semicondu... | -- | 1000 | TRANS NPN 350V 4A TO220AB... |
| MJE15035G | ON Semicondu... | 0.96 $ | 1885 | TRANS PNP 350V 4A TO220AB... |
| MJE13003G | ON Semicondu... | -- | 1000 | TRANS NPN 400V 1.5A TO-22... |
| MJE18004D2 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 450V 5A TO-220A... |
| MJE18004D2G | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 450V 5A TO-220A... |
| MJE18006 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 450V 6A TO-220A... |
| MJE18006G | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 450V 6A TO-220A... |
| MJE13005G | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 400V 4A TO220AB... |
| MJE13009G | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 400V 12A TO220A... |
| MJE18002G | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 450V 2A TO220AB... |
| MJE180PWD | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 40V 3ABipolar (... |
| MJE171STU | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 60V 3A TO-126Bi... |
| MJE180 | Central Semi... | 1.31 $ | 180 | TRANS NPN 40V 3A TO-126Bi... |
| MJE181STU | ON Semicondu... | -- | 1154 | TRANS NPN 60V 3A TO-126Bi... |
| MJE171G | ON Semicondu... | 0.41 $ | 414 | TRANS PNP 60V 3A TO225AAB... |
| MJE180STU | ON Semicondu... | -- | 3102 | TRANS NPN 40V 3A TO-126Bi... |
| MJE172STU | ON Semicondu... | 0.34 $ | 1992 | TRANS PNP 80V 3A TO-126Bi... |
| MJE182G | ON Semicondu... | 0.37 $ | 3335 | TRANS NPN 80V 3A TO225AAB... |
| MJE181G | ON Semicondu... | -- | 1442 | TRANS NPN 60V 3A TO225AAB... |
| MJE172G | ON Semicondu... | -- | 1069 | TRANS PNP 80V 3A TO225AAB... |
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
TRANS PNP 140V 1ABipolar (BJT) Transisto...
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...