Allicdata Part #: | MJE15035GOS-ND |
Manufacturer Part#: |
MJE15035G |
Price: | $ 0.96 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 350V 4A TO220AB |
More Detail: | Bipolar (BJT) Transistor PNP 350V 4A 30MHz 2W Thro... |
DataSheet: | MJE15035G Datasheet/PDF |
Quantity: | 1885 |
1 +: | $ 0.86940 |
10 +: | $ 0.77868 |
100 +: | $ 0.60707 |
500 +: | $ 0.50148 |
1000 +: | $ 0.39591 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 350V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 2A, 5V |
Power - Max: | 2W |
Frequency - Transition: | 30MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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The MJE15035G is a PNP epitaxial silicon transistor in TO-126 package. It is a low-cost, high-performance transistor suitable for general-purpose switching and amplifying applications. It has a wide range of current gain (hFE) and voltage rating, as well as other features that make it an attractive choice for a wide variety of applications.
The MJE15035G can be used to amplify signals in audio amplifiers, switches, logic inverters, clock circuits, and general power control. It provides high current gain and can switch up to 4 amps in the turning OFF state. It is also used in pre-amplifiers, amplifiers, active filters, and other discrete audio applications. It has high frequency operation up to 10MHz, making it suitable for use in a variety of digital logic circuits. Additionally, it has a low voltage forward drop (Vf) of 1.0V, making it an ideal choice for high-current power control applications.
The MJE15035G is a PNP transistor and is capable of working in either an NPN or PNP configuration. It consists of an NPN base, PNP collector, and PNP emitter. When forward biased, the NPN base will inject electrons into the NPN layer and allow holes to flow into the collector layer, thus creating a flow of current. This current flows from the collector to the emitter, thus amplifying the signal. This allows the device to be used either as an amplifier or switch.
When the transistor is reverse biassed, the NPN base will no longer inject electrons into the NPN layer and the holes in the collector layer will no longer be able to flow. Thus, the transistor will stop conducting current and will effectively be OFF. This makes the MJE15035G an ideal choice for switching applications, as it can switch up to 4 amps in the OFF state.
The MJE15035G also has other features that make it an attractive choice for many applications. It has a low saturation voltage (Vce) of 0.2V, making it suitable for high-voltage applications. It also has a high power dissipation of 800mW, making it suitable for use in audio and power control applications. Additionally, it has wide operating temperature range from -65°C to +150°C, allowing it to be used in a range of environmental conditions.
The MJE15035G is an excellent choice for a wide range of general-purpose switching and amplifying applications. Its wide range of current gains, voltage ratings, and other features make it an attractive choice for many applications. It has high current gain and a low saturation voltage, making it suitable for use in high-voltage applications, and its wide operating temperature range make it suitable for use in a range of environmental conditions. Additionally, its low voltage forward drop and high power dissipation make it ideal for audio and power control applications.
The specific data is subject to PDF, and the above content is for reference
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