Allicdata Part #: | MMBT2907AWT1GOSTR-ND |
Manufacturer Part#: |
MMBT2907AWT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 0.6A SOT323 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 150m... |
DataSheet: | MMBT2907AWT1G Datasheet/PDF |
Quantity: | 51000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 150mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | MMBT2907A |
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MMBT2907AWT1G is a type of bipolar junction transistor (BJT), commonly known as "single transistor". It has many usages and applications, and the fundamental working principle behind them will be discussed below.
Overview
MMBT2907AWT1G transistors are efficient and versatile transistors in the market. They are known for their miniature size, which makes them very well suited for deployment in circuits where space is limited. They have a wide voltage range, from 16V up to 125V, allowing them to be used in many different applications and electronic devices. They also have a high cutoff frequency of 300MHz, allowing them to be used for high-speed operations.
MMBT2907AWT1G transistors can be found in a variety of environments and applications. They are used in consumer electronics, telecommunications, medical and automotive industries. They are particularly well suited for switching, amplification, and signal processing circuits.
Working Principle
MMBT2907AWT1G transistors are "junction gate" transistors. These type of transistors are made up of two p-type and one n-type material, which are called the emitter, base, and collector, respectively. These layers, when combined, form a three-terminal device.
The working principle of MMBT2907AWT1G transistors depends on the current at the base. If a positive voltage is applied to the base, current will flow from the emitter to the collector, allowing the transistor to be in the "on" state. If the base is connected to ground, the current flow will be cut off, and the MMBT2907AWT1G will be in the "off" state. This process is known as "bipolar current switching".
In addition to using transistors as switches, they can also be used as amplifiers. This is done by controlling the current flowing through the transistor. When the base current is increased, the collector current is amplified, allowing the device to amplify a small signal.
Advantages
MMBT2907AWT1G transistors offer a variety of advantages when used in applications and devices. They are small in size, making them very well suited for deployment in circuits where space is limited. They have a wide voltage range, from 16V up to 125V, allowing them to be used in many different applications. In addition, they have a high cutoff frequency of 300MHz, allowing them to be used for high-speed operations. Their low power consumption also makes them very efficient and reliable.
Conclusion
MMBT2907AWT1G transistors are efficient and versatile transistors that are well suited for many different applications and devices. Their small size and wide voltage range allow them to be used in tight spaces, while their high cutoff frequency makes them suitable for high-frequency operations. In addition, their low power consumption makes them efficient and reliable. Although they offer many advantages, it is important to choose the correct type and model of transistor for the application in order to ensure optimal performance.
The specific data is subject to PDF, and the above content is for reference
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