MMBT5551

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MMBT5551 is a PNP silicon epitaxial planar transistor that is designed as a medium-power amplifier and switch. It is most suitable for use in medium-speed switching circuits, general-purpose amplifier circuits, and various linear circuits.

This transistor comes in a surface-mounting plastic package and is composed of a semiconductor material with two N-type and one P-type regions. This type of transistor architecture is called a bipolar junction transistor. It has three leads which connect to the collector, base and emitter. The collector is the positive terminal and the emitter is the negative terminal.

The working principle of the MMBT5551 transistor can be described with one basic equation – the current equation. This equation states that the amount of current flowing through a transistor is equal to the amount of current flowing from the base to the emitter, multiplied by the current gain of the transistor. The current gain of the transistor is determined by the ratio of collector current to base current, often known as the current gain (beta).

The MMBT5551 is often used in applications such as general purpose switching, low–noise amplifier, multiplexer and demultiplexer circuits, audio amplifier, oscillator and driver circuits, power supply circuits and high-speed switching. It is also used in logic circuits and microprocessor systems, as well as analog-to-digital and digital-to-analog converters.

The MMBT5551 has multiple features, such as low on current, low noise, low saturation voltage, high frequency linearity and good stability, which make it suitable for these types of applications. Additionally, the transistor comes with a variety of options that allow for different amplification modes, such as the common emitter, common base, and emitter follower configurations.

The MMBT5551 is capable of operating in a wide range of temperatures, from -65°C to +150°C. This temperature range encompasses the full range of temperature fluctuations in commercial products. Additionally, the MMBT5551 is available in surface mount packages, that range from 6-lead mini-DIP to SOT-23 and SOT-223.

In conclusion, the MMBT5551 is a medium-power transistor suitable for a wide range of applications. It is capable of operating in a wide range of temperatures and comes in a variety of packages. Additionally, the MMBT5551 is composed of a semiconductor material with two N-type and one P-type regions and its working principle is described by a single current equation.

The specific data is subject to PDF, and the above content is for reference