MMBT5089LT1

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	25V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	400 @ 100µA, 5V
Power - Max:	300mW
Frequency - Transition:	50MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMBT5089

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MMBT5089LT1 is a high-performance bipolar junction transistor (BJT) designed for use in amplification and switching applications, and has a single package. This transistor has a very low cutoff frequency, making it extremely efficient when used for high-GHz frequencies. It also has a high DC breakdown voltage and very little capacitance at the collector. This makes it ideal for high voltage applications.The MMBT5089LT1 is a single, NPN, open collector device, meaning it requires an external pull-up resistor to supply a current to its collector. This pulls the collector up to a voltage above the base voltage, which allows it to switch and amplify signals. This transistor is primarily used in circuits as a digital switch, because it can rapidly turn on and off. It can be used to switch on power supplies, amplify signal levels and act as a voltage regulator.The current flowing through the transistor is determined by the ratio of the collector resistance to the base resistance as described by the Ebers-Moll model. A higher ratio results in a higher current. The current is amplified proportionally to the input voltage to the base. Therefore, the gain is determined by the transistor’s current gain, which is expressed in decibels.MMBT5089LT1 transistors can be used in many different applications, including RF amplifiers, switch mode power converters, audio amplifiers and logic circuits. They are well-suited for low-noise, high-speed logic operations, especially when used in push-pull circuit configurations.Another key advantage is that these transistors are much faster than their bipolar counterparts, which makes them ideal for high-speed switching applications. In addition, they have very low output capacitance, making them ideal for RF applications.One of the drawbacks of the MMBT5089LT1 is that it requires the use of an external pull-up resistor when used as a digital switch. This takes time to charge and discharge, which can slow down the switch\'s response time.In conclusion, MMBT5089LT1 transistors are an ideal choice for high-speed, low-noise applications due to their low cutoff frequency and low capacitance. They are best used as digital switches or in RF applications as amplifiers. They require an external pull-up resistor, which can slow down their response time. Nevertheless, they provide reliable performance and are a great choice for accurate amplification and logic circuits.

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