MMBTA56-7-F

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 1V
Power - Max:	300mW
Frequency - Transition:	50MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	MMBTA56

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Introduction

The MMBTA56-7-F is a single-transistor bipolar junction transistor (BJT) device intended for use in a wide range of electronic and electrical applications. This article will discuss the MMBTA56-7-F transistor\'s application field and working principle, so that designers and engineers can better understand its capabilities and how to use it in their applications.

Application Field

The MMBTA56-7-F transistor is typically used in low-power switching and amplification of weak signals. It can be used in applications such as voltage regulators, current amplifiers, small signal amplifiers, and audio amplifiers. This device can also be used in radio frequency amplifiers, and to control the amplitude of an AC signal.

Working principle

The MMBTA56-7-F is a bipolar junction transistor that consists of three semiconductor layers: an emitter, a base and a collector, connected to each other by p-n junction diodes. The small base-emitter voltage creates a current from the emitter to the base and controls the amount of current between the collector and the emitter.When a small current is applied to the base, a large current can be drawn from the collector, allowing for efficient current amplification. This is referred to as the transistor\'s amplification factor or current gain, which is typically a low number, such as 10 or 20.The MMBTA56-7-F is capable of withstanding quite high currents, up to 10 amperes, thanks to its low collector-emitter saturation voltage. In addition, the transistor can be used in both common emitter and common collector configurations, which makes it suitable for use in a wide range of applications.

Conclusion

The MMBTA56-7-F is a single-transistor bipolar junction transistor (BJT) device intended for use in a wide range of electronic and electrical applications. Its application field includes voltage regulators, current amplifiers, small signal amplifiers, radios frequency amplifiers, and audio amplifiers. Working principle of MMBTA56-7-F involves the controlling of current flow between collector and the emitter using a small voltage applied to the base and large current being drawn from the collector. This device can withstand high current up to 10 amperes due to its low collector-emitter saturation voltage and can be used in both common emitter and common collector configurations. Designers and engineers should familiarize themselves with MMBTA56-7-F device if they would like to explore its possibilities in their applications.

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