MMBT4403-7

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	PNP
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 2V
Power - Max:	300mW
Frequency - Transition:	200MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	MMBT4403

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MMBT4403-7 Application Field and Working PrincipleThe MMBT4403-7 is a high power NPN Bipolar Junction Transistor (BJT) designed and optimized for general medium power switching applications. The wide variety of available packages, as well as its good thermal efficiency and very low gate voltage capability, allows it to be commonly used in many industrial and consumer applications.The MMBT4403-7 is categorized as a single bipolar junction transistor. It is composed of two p-type and one n-type semiconductor materials, each forming regions within the device where current will flow through. The two p-type materials form the Emitter and Collector regions and the single n-type material forms the Base region of the transistor.The mainly application field of the MMBT4403-7 is general medium power switching applications, including solenoids, relays, motors and small electronics. It has consistently proved itself to be a reliable device when it comes to these applications, and its high thermal efficiency and low gate voltage capability make it highly adaptive to many operating environments.The working principle of the MMBT4403-7 can be best explained by examining the behavior of electrons within the device. Each region of the transistor (Base, Collector, and Emitter) serves a distinct purpose in the transfer and application of power. When applying a voltage to the Emitter of the device, electrons are forced to move into the Base region. These Electrons then ‘collect’ together in the Base region, creating a depletion of electron holes within the Emitter. This depletion of electron holes within the Emitter ultimately leads to an increase in the potential barrier between the Emitter and Collector, which then enables the electrons that are ‘stored’ within the Base region to flow between the Collector and Emitter at a more efficient rate due to the increased barrier potential.The increase in the electric potential between the Emitter and Collector regions of the device is what gives the MMBT4403-7 its desired switching capabilities. The flow of electrons across this electric potential is what allows for current to be switched on or off as desired.In conclusion, the MMBT4403-7 is a single bipolar junction transistor designed to be robust enough to handle medium power applications, while providing good thermal efficiency and very low gate voltage capabilities. It works by applying a voltage to the Emitter of the device and creating a depletion of electron holes within the Emitter. This depletion of electron holes within the Emitter results in an increase in the electric potential between the Emitter and Collector regions of the device, which then enables the switching capabilities of the device to be achieved.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description