MMBT3904LT3XT

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	NPN
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	330mW
Frequency - Transition:	300MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	MMBT3904

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MMBT3904LT3XT Application Field and Working Principle

MMBT3904LT3XT transistors are a type of bipolar junction transistors (BJT) from the Single series. They are widely used for a range of purposes, such as in amplifying electrical signals and converting them into analog signals for a plethora of different applications.

Introduction and Overview

MMBT3904LT3XT transistors are field-effect transistors (FETs) with two input terminals, the source and the drain, and one output terminal, the gate. Their architecture is based on a semiconductor material: a N-type semiconductor, typically silicon, and they are usually used in amplifying electrical signals and converting them into analog signals. The MMBT3904LT3XT has a Collector-Emitter Voltage (Vce) of 40 Volts/DC, meaning that the switch is able to handle higher levels of voltages than some other transistors. With an Ic of -0.4A, and a Pd of 350mW, the MMBT3904LT3XT is an ideal choice for a variety of applications, including switching and amplification. The MMBT3904LT3XT also features a low threshold voltage, meaning that the transistor requires a low voltage to be switched on, and a low junction capacitance, meaning that it is able to switch rapidly. These features are critical for achieving high-speed switching and amplification.

Application Fields

MMBT3904LT3XT transistors are ideal for a range of general-purpose applications, including switching and amplifying electrical signals and digital-to-analog signal conversion. They are especially well-suited for use in amplifying, controlling and converting analog signals, such as audio signals. They are also well-suited for use in DC power supplies, signal amplifiers, and a wide range of RF and Microwave applications. This versatility makes them particularly useful for industrial and consumer-level applications that require a wide range of signal conversion, signal amplification, and power management.

Working Principle

The MMBT3904LT3XT transistor operates based on the principles of current flow and biasing. This type of transistor uses the base current to control its base-emitter voltage, allowing for precise control over the output voltage. When a current is applied to the base of the transistor, it will then allow a higher current to flow through the emitter-collector circuit, leading to the transistor being biased. This bias allows the transistor to either enhance or decrease the current applied to the collector, resulting in the transistor amplifying the signal.The MMBT3904LT3XT is constructed using a N-type silicon semiconductor material, which is made up of two layers of insulated silicon in which the majority of the electrons are donated by the silicon. These electrons are then used to control the current flow through the transistor.

Conclusion

MMBT3904LT3XT transistors are a versatile device that are ideal for a range of different general-purpose applications. Their low junction capacitance, rapid switching speed, low threshold voltage and high current-handling make them great for applications requiring signal amplification and conversion.

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