MMBT4126-7

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	25V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 2mA, 1V
Power - Max:	300mW
Frequency - Transition:	250MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	MMBT4126

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Introduction

MMBT4126-7 is a medium power, N-channel, medium speed, field-effect transistor (FET) containing a single gate. It is commonly used in amplifier circuits, switching circuits and other high frequency applications. The MMBT4126-7 is a high performance device with high power handling capabilities and operational stability.

Application Field

MMBT4126-7 is most commonly used in amplifier circuits, switching circuits and other high-frequency applications. It is suitable for use in ultrasonic, microwave, RF and communication/data processing circuits such as in oscillators, modulators and pulse generators. Additionally, MMBT4126-7 can be used in high power resistive and capacitive loads such as motor drive circuits, high-power switching applications and in threshold and trigger circuits.MMBT4126-7 is also suitable for applications where low noise and high gain are desired such as audio amplifiers, switches and filters. Since MMBT4126-7 is a reliable device, it can also be used in high-reliability applications requiring long life, such as power-switching applications and analogue signal processing.

Working Principle

MMBT4126-7 is a N-channel FET device with a single gate. It is designed to provide isolation between the input and output signal paths. MMBT4126-7 works by allowing an electric current to flow through an insulated semiconductor material that is resistant to external influence. The MMBT4126-7 has a low input capacitance which allows signal frequencies to maintain their integrity.In MMBT4126-7, electrons are attracted from the source to the drain as the voltage on the gate is increased. This increases the resistance of the transistor and decreases the current flow. As the gate voltage is decreased, the resistor will have less resistance and the current flow will increase. This way MMBT4126-7 is able to perform a variety of digital and analogue tasks.

Conclusion

The MMBT4126-7 is an effective medium power, N-channel, medium speed FET device. It is suitable for use in amplifier circuits, switching circuits and other high-frequency applications. It has a low input capacitance which allows signal frequencies to maintain their integrity. Additionally, MMBT4126-7 can be used in high power resistive and capacitive loads such as motor drive circuits and high-power switching applications. With its reliable high performance, MMBT4126-7 is able to effectively perform a variety of digital and analogue tasks.

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