MMBT3640_D87Z

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MMBT3640_D87Z Application Field and Working Principle

The MMBT3640_D87Z is part of the expansive line of devices offered by OnSemiconductor, incorporated in the Bipolar Transistor family of devices under the classification of Single. This device is designed to be used in a wide variety of applications due to its impressive performance capabilities, electrical characteristics, and the convenience of its assembly in a single package.

The MMBT3640_D87Z’s main function is to be used as a switching device, given its ability to covert electrical current or signals into equivalent ones, most often differing in phase shift or magnitude. This class of transistors is known as Bipolar Junction Transistors (BJT) and are widely used as amplifying or switching devices nowadays.

The MMBT3640_D87Z is composed of two base terminals, and an emitter, collector pair, usually made of Germanium or Silicon and of course the main substrate itself. Given these components and its internal structure, this device works like the two PN-junctions connected in the same way diodes do. The switching mode it uses is called the common-emitter configuration, which is used for amplifying signals and controlling power flows.

The PN junction between collector and base enhances the junction’s properties, as the resistance between them effectively lowers when there’s current applied to the base terminal. Theoretically, a transistor will have unity open-circuit gain, and the maximum may be dependent on the type of material used and is labeled as Bf (forward current gain) or Hfe (Current gain factor).

From this particular example of the MMBT3640_D87Z, the minimum current gain factor is 120, which means 120 times the amount of current present at the base will be present at the collector. The same applies with the PN junctions between the emitter and base terminals, but this current gain factor is higher, although not always the same.

As for the other important electrical characteristics of the MMBT3640_D87Z, its maximum power dissipation is 400mW, and its saturation voltage that indicates the minimum voltage difference between its collector and its emitter to keep the transistor in saturation is 1.45V. In terms of actual physical dimensions, the device is 0.20 inches in length, 0.10 inches in width.

This impressive set of devices can be found in a wide variety of applications where amplification, level shifting and current driving is required. A few examples include audio amplifiers, asymmetric switching, voltage regulators, control systems and many others.

As a concluding point, MMBT3640_D87Z is a complicated yet highly efficient device that can be used in many areas of electronics, providing high current gain, good response to frequency variation and a relatively good stability at various supply voltages making it quite popular amongst engineers. Knowing the internal structure, the main purpose and some of the basic electrical characteristics of the MMBT3640_D87Z provides a lot of knowledge about the way this component works and why it is so widely used.

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