Allicdata Part #: | MMBT4401-13-F-ND |
Manufacturer Part#: |
MMBT4401-13-F |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 40V 600MA SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 310m... |
DataSheet: | MMBT4401-13-F Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01372 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 1V |
Power - Max: | 310mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
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MMBT4401-13-F Application Field and Working Principle
The MMBT4401-13-F is a single bipolar transistor that is classed as an NPN type. It is a modern and efficient semiconductor whose primary purpose is the amplification and switching of electronic signals. This device is particularly useful for replacing older, less-efficient bipolar transistors and is used worldwide in the latest technologies.
Features and Benefits
The MMBT4401-13-F provides a wide range of features and benefits over its predecessor transistors. It boasts a very low power consumption when compared to similar transistors and allows for efficient operation. Moreover, the MMBT4401-13-F is designed to handle increased currents and temperatures when compared to traditional transistors. The benefits of this include increased life and performance of the transistor. Moreover, its small size allows for it to be implemented in more compact designs.
Fabrication
The MMBT4401-13-F is fabricated from a modern wafer process and contains two dice in each die, each containing two dice. This fabrication process is what allows for the transistors to handle increased currents and temperatures. Additionally, the MMBT4401-13-F is encapsulated in a lead-free hermetic package, ensuring that its performance will remain consistent throughout its lifetime.
Working Principle
The principle of operation of the MMBT4401-13-F is based on the principle of n-type (electron) and p-type (hole) doping. Electrical current is allowed to flow between the two types of regions, creating a flow of current which can then be directed and amplified. In the MMBT4401-13-F, these two regions are the collector and the base. The collector region is the primary source of the current and is what allows for the current to be amplified and directed, while the base region is where the current is directed by the applied voltage.
Applications
The MMBT4401-13-F is useful in a variety of applications due to its high performance and low power consumption. It is commonly used in signal amplification and signal switching applications, such as in audio amplifiers. Additionally, the MMBT4401-13-F is often used in power conversion and protection applications such as in AC/DC inverters and DC-DC converters. Lastly, the MMBT4401-13-F is often employed in drive circuits, where its efficiency and amplified current output can offer significant benefits.
Conclusion
The MMBT4401-13-F is a single bipolar transistor that offers an impressive range of features, benefits and applications. Its modern fabrication process and encapsulation in a lead-free hermetic package provides excellent performance and reliability, making it a great choice for any application where efficiency, heat and current handling are all important. Moreover, its small size enables its use in more compact designs, making it perfect for use in a variety of modern devices.
The specific data is subject to PDF, and the above content is for reference
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